Synergistic optimization of electronic and lattice structures through Ti-intercalation and Se-vacancy engineering for high-performance aluminum storage
Layered chalcogenides play significant roles in electrochemical energy storage. However, their application potential is restricted by sluggish charge transfer and storage kinetics. Herein, a dual-defect strategy involving Ti intercalation and Se vacancies (SVs) is proposed to modulate the electronic...
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Veröffentlicht in: | Energy & environmental science 2024-10, Vol.17 (19), p.7135-7146 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Layered chalcogenides play significant roles in electrochemical energy storage. However, their application potential is restricted by sluggish charge transfer and storage kinetics. Herein, a dual-defect strategy involving Ti intercalation and Se vacancies (SVs) is proposed to modulate the electronic structure of MoSe 2 and enhance the electrochemical performance of aluminum batteries (ABs). The dense atomic orbitals of Ti and Mo in Ti–MoSe 2− x contribute numerous electron states near the Fermi level, effectively filling the wide bandgap. This fundamentally activates the intrinsic electronic properties, elevating the charge-transfer ability. Moreover, the synchronous optimization of planar and interlayer structures endows the Ti–MoSe 2− x with ample active sites and expanded layer spacing, enhancing ion migration and electrochemical capacity. The significant charge interaction between Ti–MoSe 2− x and active electrolyte ions promotes the affinity and storage ability of cathodes for charge carriers. Owing to these merits, the Ti–MoSe 2− x cathode exhibits enhanced reversible capacity (250 mA h g −1 at 0.5 A g −1 ) and superior cycling stability (132 mA h g −1 over 2400 cycles at 5.0 A g −1 ) with fast reaction kinetics. This research offers in-depth insights into the electrochemical energy storage for ABs by modulating the electronic and lattice structures of layered chalcogenides. |
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ISSN: | 1754-5692 1754-5706 |
DOI: | 10.1039/D4EE02227K |