Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD (Small 37/2024)

Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD (Small 37/2024)

2D Materials Controlled growth of 2‐dimensional GaS on sapphire substrates is enabled on wafer scale by metal organic chemical vapor deposition. The aligned growth on the substrate is mediated by a Ga‐termination of the surface. The layers show emission from the ultraviolet to the visible range depe...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2024-09, Vol.20 (37), p.n/a
Hauptverfasser: Maßmeyer, Oliver, Günkel, Robin, Glowatzki, Johannes, Klement, Philip, Ojaghi Dogahe, Badrosadat, Kachel, Stefan Renato, Gruber, Felix, Müller, Marius, Fey, Melanie, Schörmann, Jörg, Belz, Jürgen, Beyer, Andreas, Gottfried, J. Michael, Chatterjee, Sangam, Volz, Kerstin
Format: Artikel
Sprache:eng
Schlagworte:
2D materials
Chemical synthesis
Gallium
gallium sulfide
Metalorganic chemical vapor deposition
metal–organic chemical vapor deposition
Organic chemistry
Sapphire
Substrates
Two dimensional materials
Ultraviolet emission
UV emission
wafer scale
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:2D Materials Controlled growth of 2‐dimensional GaS on sapphire substrates is enabled on wafer scale by metal organic chemical vapor deposition. The aligned growth on the substrate is mediated by a Ga‐termination of the surface. The layers show emission from the ultraviolet to the visible range depending on the number of layers. More in article number 2402155, Kerstin Volz and co‐workers.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.202470276