Direct transition from the rhombohedral ferroelectric to the paraelectric phase in a (Ba,Sr)TiO3 thin film on a (111)MgO substrate

Direct transition from the rhombohedral ferroelectric to the paraelectric phase in a (Ba,Sr)TiO3 thin film on a (111)MgO substrate

A heteroepitaxial (200 nm thick) (BST) thin film was deposited on a (111)MgO substrate using rf sputtering. X-ray diffraction examinations confirmed epitaxial growth and rhombohedral symmetry of the film ( and ) at room temperature. Polarized Raman spectra of the film were studied in the temperature...

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Veröffentlicht in:Europhysics letters 2015-11, Vol.112 (4), p.47001
Hauptverfasser: Anokhin, A. S., Yuzyuk, Yu. I., Lyanguzov, N. V., Razumnaya, A. G., Stryukov, D. V., Bunina, O. A., Golovko, Yu. I., Shirokov, V. B., Mukhortov, V. M., El Marssi, M.
Format: Artikel
Sprache:eng
Schlagworte:
77.55.fe
78.30.-j
Epitaxial growth
Ferroelectric materials
Ferroelectricity
Magnesium oxide
Phase transitions
Raman spectra
Room temperature
Substrates
Temperature dependence
Thin films
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Zusammenfassung:A heteroepitaxial (200 nm thick) (BST) thin film was deposited on a (111)MgO substrate using rf sputtering. X-ray diffraction examinations confirmed epitaxial growth and rhombohedral symmetry of the film ( and ) at room temperature. Polarized Raman spectra of the film were studied in the temperature range from 100 to 420 K. In contrast to a BST thin film grown on (001)MgO, the observed linear temperature dependence of the squared soft mode frequency suggests the displacive character of the ferroelectric-paraelectric phase transition in a BST thin film on (111)MgO.
ISSN:0295-5075
1286-4854
DOI:10.1209/0295-5075/112/47001