Reducing non-effective pixel rate and nonuniformity in AlGaN solar-blind UV focal plane detectors by controlled curvature

A 1600 × 1280 small pixel photodetector was successfully fabricated to verify the controlled curvature of the focal plane array improving the non-effective pixel rate and non-uniformity of the detector. The stress strain generated during epitaxial growth was reduced by growing a 2 μ m thick AlN stress correction layer on the backside of the AlGaN/sapphire system substrate. Compared with the material without an AlN stress correction layer on the backside, material curvature reduced from 7.252 μ m to 2.740 μ m over a length of 0.5 cm. The non-effective pixel rate and the non-uniformity of a focal plane array have been reduced. A process was proposed to reduce the impact of misalignment generated by the flip-chip interconnection process. A solar-blind UV focal plane array was hybridized with a readout integrated circuit using an unsymmetrical flip-chip interconnection process. There is no significant change in peak spectral response, nonuniformity, non-effective pixel rate, or responsivity.