Behavior of defects in GaN avalanche photodiodes grown on GaN substrates
GaN avalanche photodiodes grown on GaN substrates were successfully fabricated. These devices displayed a low dark current, measuring
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 2024-09, Vol.63 (9), p.91004 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 9 |
| container_start_page | 91004 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 63 |
| creator | Yang, Fan Gong, Ziye Shi, Fan Xu, Jintong Li, Xiangyang |
| description | GaN avalanche photodiodes grown on GaN substrates were successfully fabricated. These devices displayed a low dark current, measuring |
| doi_str_mv | 10.35848/1347-4065/ad776d |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_3109399526</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3109399526</sourcerecordid><originalsourceid>FETCH-LOGICAL-c193t-77081021084e35208fa03f406a813a4efe65946a70804bd8b04522cbfbe820173</originalsourceid><addsrcrecordid>eNp1kM1OwzAQhC0EEqXwANwscQ5d_yXOESpokSq4wNnaJDZNVeJgp0W8PS5BcOK02tU3s6Mh5JLBtVBa6hkTssgk5GqGTVHkzRGZ_J6OyQSAs0yWnJ-Ssxg3ac2VZBOyvLVr3Lc-UO9oY52th0jbji7wkeIet9jVa0v7tR980_rGRvoa_EdH_YjEXRWHgION5-TE4Tbai585JS_3d8_zZbZ6WjzMb1ZZzUoxZEUBmqUsoKUVioN2CMKlkKiZQJkC5KqUOSYMZNXoCqTivK5cZTUHVogpuRp9--DfdzYOZuN3oUsvjWBQirJUPE8UG6k6-BiDdaYP7RuGT8PAfBdmDu2YQztmLCxpslHT-v7P9H_-C6FUamQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3109399526</pqid></control><display><type>article</type><title>Behavior of defects in GaN avalanche photodiodes grown on GaN substrates</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Yang, Fan ; Gong, Ziye ; Shi, Fan ; Xu, Jintong ; Li, Xiangyang</creator><creatorcontrib>Yang, Fan ; Gong, Ziye ; Shi, Fan ; Xu, Jintong ; Li, Xiangyang</creatorcontrib><description>GaN avalanche photodiodes grown on GaN substrates were successfully fabricated. These devices displayed a low dark current, measuring <80 pA at a reverse bias of 82.0 V. Notably, the response spectrum of the devices showed new out-of-band response peaks with increasing reverse bias. Moreover, at high reverse bias, the devices emitted visible light. These phenomena were attributed to inherent defects within the materials. The defect level fitted from the tunneling currents closely matched the experimental value, indicating that the defect-assisted tunneling effect, with a defect level at 0.127 eV relative to the conduction band, contributed to the out-of-band response peak in the response spectrum. The Franz–Keldysh effect led to a redshift in the response spectrum. Additionally, the Mg-related deep energy level situated approximately 0.498 eV above the valence band, facilitated radiative recombination at high reverse bias. Meanwhile, the device’s luminescent image displayed a consistently square shape, suggesting uniform avalanche breakdown throughout the device.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ad776d</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>Avalanche diodes ; Bias ; Conduction bands ; current responsivity ; Dark current ; defect luminescence ; defect-assisted tunneling ; Defects ; Electron avalanche ; Energy levels ; Gallium nitrides ; GaN avalanche photodiodes ; Measuring instruments ; Photodiodes ; Radiative recombination ; Red shift ; Substrates ; Valence band</subject><ispartof>Japanese Journal of Applied Physics, 2024-09, Vol.63 (9), p.91004</ispartof><rights>2024 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c193t-77081021084e35208fa03f406a813a4efe65946a70804bd8b04522cbfbe820173</cites><orcidid>0009-0005-9128-3978</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/ad776d/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Yang, Fan</creatorcontrib><creatorcontrib>Gong, Ziye</creatorcontrib><creatorcontrib>Shi, Fan</creatorcontrib><creatorcontrib>Xu, Jintong</creatorcontrib><creatorcontrib>Li, Xiangyang</creatorcontrib><title>Behavior of defects in GaN avalanche photodiodes grown on GaN substrates</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>GaN avalanche photodiodes grown on GaN substrates were successfully fabricated. These devices displayed a low dark current, measuring <80 pA at a reverse bias of 82.0 V. Notably, the response spectrum of the devices showed new out-of-band response peaks with increasing reverse bias. Moreover, at high reverse bias, the devices emitted visible light. These phenomena were attributed to inherent defects within the materials. The defect level fitted from the tunneling currents closely matched the experimental value, indicating that the defect-assisted tunneling effect, with a defect level at 0.127 eV relative to the conduction band, contributed to the out-of-band response peak in the response spectrum. The Franz–Keldysh effect led to a redshift in the response spectrum. Additionally, the Mg-related deep energy level situated approximately 0.498 eV above the valence band, facilitated radiative recombination at high reverse bias. Meanwhile, the device’s luminescent image displayed a consistently square shape, suggesting uniform avalanche breakdown throughout the device.</description><subject>Avalanche diodes</subject><subject>Bias</subject><subject>Conduction bands</subject><subject>current responsivity</subject><subject>Dark current</subject><subject>defect luminescence</subject><subject>defect-assisted tunneling</subject><subject>Defects</subject><subject>Electron avalanche</subject><subject>Energy levels</subject><subject>Gallium nitrides</subject><subject>GaN avalanche photodiodes</subject><subject>Measuring instruments</subject><subject>Photodiodes</subject><subject>Radiative recombination</subject><subject>Red shift</subject><subject>Substrates</subject><subject>Valence band</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp1kM1OwzAQhC0EEqXwANwscQ5d_yXOESpokSq4wNnaJDZNVeJgp0W8PS5BcOK02tU3s6Mh5JLBtVBa6hkTssgk5GqGTVHkzRGZ_J6OyQSAs0yWnJ-Ssxg3ac2VZBOyvLVr3Lc-UO9oY52th0jbji7wkeIet9jVa0v7tR980_rGRvoa_EdH_YjEXRWHgION5-TE4Tbai585JS_3d8_zZbZ6WjzMb1ZZzUoxZEUBmqUsoKUVioN2CMKlkKiZQJkC5KqUOSYMZNXoCqTivK5cZTUHVogpuRp9--DfdzYOZuN3oUsvjWBQirJUPE8UG6k6-BiDdaYP7RuGT8PAfBdmDu2YQztmLCxpslHT-v7P9H_-C6FUamQ</recordid><startdate>20240902</startdate><enddate>20240902</enddate><creator>Yang, Fan</creator><creator>Gong, Ziye</creator><creator>Shi, Fan</creator><creator>Xu, Jintong</creator><creator>Li, Xiangyang</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0009-0005-9128-3978</orcidid></search><sort><creationdate>20240902</creationdate><title>Behavior of defects in GaN avalanche photodiodes grown on GaN substrates</title><author>Yang, Fan ; Gong, Ziye ; Shi, Fan ; Xu, Jintong ; Li, Xiangyang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c193t-77081021084e35208fa03f406a813a4efe65946a70804bd8b04522cbfbe820173</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Avalanche diodes</topic><topic>Bias</topic><topic>Conduction bands</topic><topic>current responsivity</topic><topic>Dark current</topic><topic>defect luminescence</topic><topic>defect-assisted tunneling</topic><topic>Defects</topic><topic>Electron avalanche</topic><topic>Energy levels</topic><topic>Gallium nitrides</topic><topic>GaN avalanche photodiodes</topic><topic>Measuring instruments</topic><topic>Photodiodes</topic><topic>Radiative recombination</topic><topic>Red shift</topic><topic>Substrates</topic><topic>Valence band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Fan</creatorcontrib><creatorcontrib>Gong, Ziye</creatorcontrib><creatorcontrib>Shi, Fan</creatorcontrib><creatorcontrib>Xu, Jintong</creatorcontrib><creatorcontrib>Li, Xiangyang</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Fan</au><au>Gong, Ziye</au><au>Shi, Fan</au><au>Xu, Jintong</au><au>Li, Xiangyang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Behavior of defects in GaN avalanche photodiodes grown on GaN substrates</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2024-09-02</date><risdate>2024</risdate><volume>63</volume><issue>9</issue><spage>91004</spage><pages>91004-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>GaN avalanche photodiodes grown on GaN substrates were successfully fabricated. These devices displayed a low dark current, measuring <80 pA at a reverse bias of 82.0 V. Notably, the response spectrum of the devices showed new out-of-band response peaks with increasing reverse bias. Moreover, at high reverse bias, the devices emitted visible light. These phenomena were attributed to inherent defects within the materials. The defect level fitted from the tunneling currents closely matched the experimental value, indicating that the defect-assisted tunneling effect, with a defect level at 0.127 eV relative to the conduction band, contributed to the out-of-band response peak in the response spectrum. The Franz–Keldysh effect led to a redshift in the response spectrum. Additionally, the Mg-related deep energy level situated approximately 0.498 eV above the valence band, facilitated radiative recombination at high reverse bias. Meanwhile, the device’s luminescent image displayed a consistently square shape, suggesting uniform avalanche breakdown throughout the device.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/ad776d</doi><tpages>7</tpages><orcidid>https://orcid.org/0009-0005-9128-3978</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2024-09, Vol.63 (9), p.91004 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_proquest_journals_3109399526 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Avalanche diodes Bias Conduction bands current responsivity Dark current defect luminescence defect-assisted tunneling Defects Electron avalanche Energy levels Gallium nitrides GaN avalanche photodiodes Measuring instruments Photodiodes Radiative recombination Red shift Substrates Valence band |
| title | Behavior of defects in GaN avalanche photodiodes grown on GaN substrates |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T16%3A55%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Behavior%20of%20defects%20in%20GaN%20avalanche%20photodiodes%20grown%20on%20GaN%20substrates&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Yang,%20Fan&rft.date=2024-09-02&rft.volume=63&rft.issue=9&rft.spage=91004&rft.pages=91004-&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPB6&rft_id=info:doi/10.35848/1347-4065/ad776d&rft_dat=%3Cproquest_cross%3E3109399526%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3109399526&rft_id=info:pmid/&rfr_iscdi=true |