Behavior of defects in GaN avalanche photodiodes grown on GaN substrates

Behavior of defects in GaN avalanche photodiodes grown on GaN substrates

GaN avalanche photodiodes grown on GaN substrates were successfully fabricated. These devices displayed a low dark current, measuring

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Bibliographische Detailangaben
Veröffentlicht in:Japanese Journal of Applied Physics 2024-09, Vol.63 (9), p.91004
Hauptverfasser: Yang, Fan, Gong, Ziye, Shi, Fan, Xu, Jintong, Li, Xiangyang
Format: Artikel
Sprache:eng
Schlagworte:
Avalanche diodes
Bias
Conduction bands
current responsivity
Dark current
defect luminescence
defect-assisted tunneling
Defects
Electron avalanche
Energy levels
Gallium nitrides
GaN avalanche photodiodes
Measuring instruments
Photodiodes
Radiative recombination
Red shift
Substrates
Valence band
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Zusammenfassung:GaN avalanche photodiodes grown on GaN substrates were successfully fabricated. These devices displayed a low dark current, measuring
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ad776d