Approximation of the Absorption Spectrum of Indium Phosphide in the Context of Simulation of the Process of Sensation

The fundamental properties of indium phosphide (InP) doped with tellurium and, subsequently, compensated with copper are considered. Data are presented on the existence of four qualitative patterns of the empirical photoconductivity (PC) spectra of InP:Cu in its own region. Works with semiempirical approximation of the PC of sensitive InP:Cu samples are indicated. It is noted that the PC of I P (α( )) was analytically approximated as a function of the experimentally obtained spectral dependence of the absorption coefficient of InP. Five approximating functions are proposed in order to obtain an analytical dependence of the absorption coefficient of InP α( ). Five dependencies with different values of the standard deviation are obtained. Based on the analytical dependencies, the complete analytical dependence of I P (α( )) is modeled. Similarly, five dependencies are obtained, characterized by the corresponding value of the standard deviation. Five nonstationary PC surfaces of I P (as a function of two variables: absorption coefficient, as a function of photon energy, and sample exposure time under normal conditions) are constructed. A conclusion is made about the choice of the most mathematically accurate and physically meaningful approximating function α( ). Accordingly, it is shown that this dependence is optimal for obtaining based on it (including this dependence in the structure of I P = f (α) and α = f ( )) a complete analytical description of the PC process. It is shown that subsequent studies can be aimed at explaining the physical bases of PC in the short-wave region of the fundamental transitions of InP and studying methods of influencing the surface layer of InP:Cu, with the aim of sensitizing and stabilizing it.