Characterization of Bi12SiO20 single crystal: understanding structural and thermal properties
This study presents a thorough examination of the structural and thermal characteristics of Bi 12 SiO 20 crystal. X-ray diffraction (XRD) analysis was employed to investigate the crystallographic structure, while scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were utiliz...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2024-10, Vol.130 (10), Article 735 |
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| creator | Altuntas, G. Isik, M. Gasanly, N. M. |
| description | This study presents a thorough examination of the structural and thermal characteristics of Bi
12
SiO
20
crystal. X-ray diffraction (XRD) analysis was employed to investigate the crystallographic structure, while scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were utilized to ascertain morphological features and elemental composition, respectively. The XRD spectrum exhibited numerous peaks corresponding to the cubic crystalline structure. Thermal behavior was investigated through thermal gravimetric analysis (TGA), differential thermal analysis (DTA) and differential scanning calorimetry (DSC). Within the crystal, negligible weight loss was observed up to 750 °C, followed by weight loss processes occurring in the temperature ranges of 750–919 °C and above 919 °C. The 2% weight loss in the range of 750–919 °C was associated with the decomposition process, and the activation energy of this process was found to be 199 kJ/mol considering Coats-Redfern expression. A significant weight loss was observed in the region above 919
o
C and was associated with the decomposition of the Bi
12
SiO
20
compound and/or the melting processes of the components of the Bi
12
SiO
20
compound. Three endothermic peaks were observed in the DTA plot. Additionally, DSC measurements conducted under varied heating rates indicated endothermic crystallization process around 348 °C, with an activation energy of 522 kJ/mol determined through the Kissenger equation. These findings present valuable details regarding the crystal’s structural configuration, morphological attributes, and decomposition/phase transitions, thereby illuminating its potential applications across various fields. |
| doi_str_mv | 10.1007/s00339-024-07894-w |
| format | Article |
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12
SiO
20
crystal. X-ray diffraction (XRD) analysis was employed to investigate the crystallographic structure, while scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were utilized to ascertain morphological features and elemental composition, respectively. The XRD spectrum exhibited numerous peaks corresponding to the cubic crystalline structure. Thermal behavior was investigated through thermal gravimetric analysis (TGA), differential thermal analysis (DTA) and differential scanning calorimetry (DSC). Within the crystal, negligible weight loss was observed up to 750 °C, followed by weight loss processes occurring in the temperature ranges of 750–919 °C and above 919 °C. The 2% weight loss in the range of 750–919 °C was associated with the decomposition process, and the activation energy of this process was found to be 199 kJ/mol considering Coats-Redfern expression. A significant weight loss was observed in the region above 919
o
C and was associated with the decomposition of the Bi
12
SiO
20
compound and/or the melting processes of the components of the Bi
12
SiO
20
compound. Three endothermic peaks were observed in the DTA plot. Additionally, DSC measurements conducted under varied heating rates indicated endothermic crystallization process around 348 °C, with an activation energy of 522 kJ/mol determined through the Kissenger equation. These findings present valuable details regarding the crystal’s structural configuration, morphological attributes, and decomposition/phase transitions, thereby illuminating its potential applications across various fields.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-024-07894-w</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Activation energy ; Bismuth silicon oxide ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Crystal structure ; Crystallization ; Crystallography ; Decomposition ; Differential scanning calorimetry ; Differential thermal analysis ; Endothermic reactions ; Machines ; Manufacturing ; Morphology ; Nanotechnology ; Optical and Electronic Materials ; Phase transitions ; Physics ; Physics and Astronomy ; Processes ; Single crystals ; Structural analysis ; Surfaces and Interfaces ; Thermodynamic properties ; Thermogravimetric analysis ; Thin Films ; Weight loss ; X-ray diffraction</subject><ispartof>Applied physics. A, Materials science & processing, 2024-10, Vol.130 (10), Article 735</ispartof><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c200t-11e009b22a675634dde724346804e98c931f2fead7ca82f57a223c37a24aedd03</cites><orcidid>0000-0003-4504-0850</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-024-07894-w$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-024-07894-w$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Altuntas, G.</creatorcontrib><creatorcontrib>Isik, M.</creatorcontrib><creatorcontrib>Gasanly, N. M.</creatorcontrib><title>Characterization of Bi12SiO20 single crystal: understanding structural and thermal properties</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>This study presents a thorough examination of the structural and thermal characteristics of Bi
12
SiO
20
crystal. X-ray diffraction (XRD) analysis was employed to investigate the crystallographic structure, while scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were utilized to ascertain morphological features and elemental composition, respectively. The XRD spectrum exhibited numerous peaks corresponding to the cubic crystalline structure. Thermal behavior was investigated through thermal gravimetric analysis (TGA), differential thermal analysis (DTA) and differential scanning calorimetry (DSC). Within the crystal, negligible weight loss was observed up to 750 °C, followed by weight loss processes occurring in the temperature ranges of 750–919 °C and above 919 °C. The 2% weight loss in the range of 750–919 °C was associated with the decomposition process, and the activation energy of this process was found to be 199 kJ/mol considering Coats-Redfern expression. A significant weight loss was observed in the region above 919
o
C and was associated with the decomposition of the Bi
12
SiO
20
compound and/or the melting processes of the components of the Bi
12
SiO
20
compound. Three endothermic peaks were observed in the DTA plot. Additionally, DSC measurements conducted under varied heating rates indicated endothermic crystallization process around 348 °C, with an activation energy of 522 kJ/mol determined through the Kissenger equation. These findings present valuable details regarding the crystal’s structural configuration, morphological attributes, and decomposition/phase transitions, thereby illuminating its potential applications across various fields.</description><subject>Activation energy</subject><subject>Bismuth silicon oxide</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Crystal structure</subject><subject>Crystallization</subject><subject>Crystallography</subject><subject>Decomposition</subject><subject>Differential scanning calorimetry</subject><subject>Differential thermal analysis</subject><subject>Endothermic reactions</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Morphology</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Phase transitions</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Single crystals</subject><subject>Structural analysis</subject><subject>Surfaces and Interfaces</subject><subject>Thermodynamic properties</subject><subject>Thermogravimetric analysis</subject><subject>Thin Films</subject><subject>Weight loss</subject><subject>X-ray diffraction</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9UEtLAzEQDqJgrf4BTwHP0cmj-_CmxRcUelCPEmJ2tt2y3a2TLKX-eqMVvDmX-Zj5HvAxdi7hUgLkVwFA61KAMgLyojRie8BG0mglINNwyEZQmlwUusyO2UkIK0hjlBqxt-nSkfMRqfl0sek73tf8tpHquZkr4KHpFi1yT7sQXXvNh65CSrCr0oOHSIOPA7mWpwuPS6R1whvqN0ixwXDKjmrXBjz73WP2en_3Mn0Us_nD0_RmJrwCiEJKBCjflXJZPsm0qSrMldEmK8BgWfhSy1rV6Krcu0LVk9wppb1OyzisKtBjdrH3TdEfA4ZoV_1AXYq0WkJmjEyTWGrP8tSHQFjbDTVrRzsrwX7XaPc12lSj_anRbpNI70UhkbsF0p_1P6ovQXh2bQ</recordid><startdate>20241001</startdate><enddate>20241001</enddate><creator>Altuntas, G.</creator><creator>Isik, M.</creator><creator>Gasanly, N. M.</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-4504-0850</orcidid></search><sort><creationdate>20241001</creationdate><title>Characterization of Bi12SiO20 single crystal: understanding structural and thermal properties</title><author>Altuntas, G. ; Isik, M. ; Gasanly, N. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c200t-11e009b22a675634dde724346804e98c931f2fead7ca82f57a223c37a24aedd03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Activation energy</topic><topic>Bismuth silicon oxide</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Crystal structure</topic><topic>Crystallization</topic><topic>Crystallography</topic><topic>Decomposition</topic><topic>Differential scanning calorimetry</topic><topic>Differential thermal analysis</topic><topic>Endothermic reactions</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Morphology</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Phase transitions</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Single crystals</topic><topic>Structural analysis</topic><topic>Surfaces and Interfaces</topic><topic>Thermodynamic properties</topic><topic>Thermogravimetric analysis</topic><topic>Thin Films</topic><topic>Weight loss</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Altuntas, G.</creatorcontrib><creatorcontrib>Isik, M.</creatorcontrib><creatorcontrib>Gasanly, N. M.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Altuntas, G.</au><au>Isik, M.</au><au>Gasanly, N. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of Bi12SiO20 single crystal: understanding structural and thermal properties</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2024-10-01</date><risdate>2024</risdate><volume>130</volume><issue>10</issue><artnum>735</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>This study presents a thorough examination of the structural and thermal characteristics of Bi
12
SiO
20
crystal. X-ray diffraction (XRD) analysis was employed to investigate the crystallographic structure, while scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were utilized to ascertain morphological features and elemental composition, respectively. The XRD spectrum exhibited numerous peaks corresponding to the cubic crystalline structure. Thermal behavior was investigated through thermal gravimetric analysis (TGA), differential thermal analysis (DTA) and differential scanning calorimetry (DSC). Within the crystal, negligible weight loss was observed up to 750 °C, followed by weight loss processes occurring in the temperature ranges of 750–919 °C and above 919 °C. The 2% weight loss in the range of 750–919 °C was associated with the decomposition process, and the activation energy of this process was found to be 199 kJ/mol considering Coats-Redfern expression. A significant weight loss was observed in the region above 919
o
C and was associated with the decomposition of the Bi
12
SiO
20
compound and/or the melting processes of the components of the Bi
12
SiO
20
compound. Three endothermic peaks were observed in the DTA plot. Additionally, DSC measurements conducted under varied heating rates indicated endothermic crystallization process around 348 °C, with an activation energy of 522 kJ/mol determined through the Kissenger equation. These findings present valuable details regarding the crystal’s structural configuration, morphological attributes, and decomposition/phase transitions, thereby illuminating its potential applications across various fields.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-024-07894-w</doi><orcidid>https://orcid.org/0000-0003-4504-0850</orcidid></addata></record> |
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| subjects | Activation energy Bismuth silicon oxide Characterization and Evaluation of Materials Condensed Matter Physics Crystal structure Crystallization Crystallography Decomposition Differential scanning calorimetry Differential thermal analysis Endothermic reactions Machines Manufacturing Morphology Nanotechnology Optical and Electronic Materials Phase transitions Physics Physics and Astronomy Processes Single crystals Structural analysis Surfaces and Interfaces Thermodynamic properties Thermogravimetric analysis Thin Films Weight loss X-ray diffraction |
| title | Characterization of Bi12SiO20 single crystal: understanding structural and thermal properties |
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