Terahertz Radiation Sources with an Active Region Based on Super-Multiperiod AlGaAs/GaAs Superlattices

In this article, several designs of the active region of the THz radiation source are considered, taking into account grown super-multiperiod AlGaAs/GaAs superlattices. For the proposed designs, the principal device characteristics are computed: energy band diagram, gain spectrum, and transport char...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2024-04, Vol.58 (4), p.310-314
Hauptverfasser: Dashkov, A. S., Gerchikov, L. G., Goray, L. I., Kostromin, N. A., Bouravleuv, A. D.
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Sprache:eng
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Zusammenfassung:In this article, several designs of the active region of the THz radiation source are considered, taking into account grown super-multiperiod AlGaAs/GaAs superlattices. For the proposed designs, the principal device characteristics are computed: energy band diagram, gain spectrum, and transport characteristics. Based on the calculation results, the authors proposed an optimal design of the active region of a tunable THz radiation source.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782624040055