Linear Hybrid Asymmetrical Load- Modulated Balanced Amplifier With Multiband Reconfigurability and Antenna-VSWR Resilience
This article presents the first-ever highly linear and load-insensitive three-way load-modulation power amplifier (PA) based on reconfigurable hybrid asymmetrical load modulated balanced amplifier (H-ALMBA). Through proper amplitude and phase controls, the carrier, control amplifier (CA), and two pe...
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Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2024-09, Vol.72 (9), p.5319-5332 |
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Sprache: | eng |
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Zusammenfassung: | This article presents the first-ever highly linear and load-insensitive three-way load-modulation power amplifier (PA) based on reconfigurable hybrid asymmetrical load modulated balanced amplifier (H-ALMBA). Through proper amplitude and phase controls, the carrier, control amplifier (CA), and two peaking balanced amplifiers (BA1 and BA2) can form a linear high-order load modulation over wide bandwidth. Moreover, it is theoretically unveiled that the load modulation behavior of H-ALMBA can be insensitive to load mismatch by leveraging bias reconfiguration and the intrinsic load-insensitivity of balanced topology. Specifically, the PA's linearity and efficiency profiles can be maintained against arbitrary load mismatch through Z_{L} -dependent reconfiguration of CA supply voltage ( V_{\mathrm {DD,CA}} ) and turning-on sequence of BA1 and BA2. Based on the proposed theory, an RF-input linear H-ALMBA is developed with GaN transistors and wideband quadrature hybrids. Over the design bandwidth from 1.7 to 2.9 GHz, an efficiency of 56.8\% - 72.9\% at peak power and 49.8\% - 61.2\% at 10-dB PBO are measured together with linear AMAM and AMPM responses. In modulated evaluation with 4G LTE signal, an EVM of 3.1%, ACPR of −39 dB, and average efficiency of up to 52% are measured. Moreover, the reconfigurable H-ALMBA experimentally maintains an excellent average efficiency and linearity against arbitrary load mismatch at 2:1 VSWR, and this mismatch-resilient operation can be achieved at any in-band frequencies. The overall measured performance favorably outperforms the state-of-the-art. |
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ISSN: | 0018-9480 1557-9670 |
DOI: | 10.1109/TMTT.2024.3381845 |