Polaron hopping conduction at near morphotropic phase boundary by dilute magnetic ions in ferroelectric materials

Ferroelectric (FE) materials and their advancements have piqued the scientific community’s interest greatly since they provide numerous fascinating processes in addition to being used in devices. Among them, we have studied Mn and Sn co-doped PZT and Pb (Zr 0.52 Ti 0.48 ) O 3 as PZT, an extremely intriguing FE. The structure and phase purity of all the samples are determined by x-ray diffraction techniques. All the samples show a very good microstructures and the average grain size is found to be decreased with ion incorporation. The UV-Vis spectra show how doping reduces optical band gaps. Parallel resistance (R)-capacitance (C) circuits have been used to analyze the relationship between microstructure and electrical characteristics. The microscopic processes in various PZT samples with dilute magnetic cations at A-sites, B-sites, and/or both sites at the morphotopic phase boundary are established from the detail impedance, modulus, and ac conductivity of the samples as a function of temperature (300 –500 °C) and over a range of frequency (100 Hz to 1 MHz). Additionally, the framework of the Jump relaxation model and the Jonscher power law are used to study the ac-conductivity data.