Selective Area Epitaxy of InP/GaInP2Quantum Dots from Metal-Organic Compounds

Selective Area Epitaxy of InP/GaInP2Quantum Dots from Metal-Organic Compounds

Experiments on the growth of self-assembled InP/GaInP 2 quantum dots in dielectric mask 0.1–1 μm apertures by MOVPE epitaxy have been carried out. A sequence of operations for the implementation of the lift-off lithography method is proposed and implemented. The possibility of obtaining apertures wi...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2024, Vol.58 (2), p.187-190
Hauptverfasser: Vlasov, A. S., Afanasev, K. M., Galimov, A. I., Kalyuzhnyy, N. A., Lebedev, D. V., Malevskaya, A. V., Mintairov, S. A., Rakhlin, M. V., Salii, R. A., Mozharov, A. M., Mukhin, I. S., Mintairov, A. M.
Format: Artikel
Sprache:eng
Schlagworte:
Apertures
Epitaxial growth
Indium phosphides
Magnetic Materials
Magnetism
Organometallic compounds
Physics
Physics and Astronomy
Quantum dots
Self-assembly
Silicon dioxide
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Zusammenfassung:Experiments on the growth of self-assembled InP/GaInP 2 quantum dots in dielectric mask 0.1–1 μm apertures by MOVPE epitaxy have been carried out. A sequence of operations for the implementation of the lift-off lithography method is proposed and implemented. The possibility of obtaining apertures with 100 nm diameter and less is shown. Combination of thermally deposited SiO 2 and wet etching is shown to produce minimal amount of nonradiative defects and results in a stable PL signal from single QDs in the aperture.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782624020167