Development of APCVD BSG and POCl3 Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication

This article presents a commercially viable process for fabricating a high-quality double-side tunnel oxide passivating contact (DS-TOPCon) cell precursor using atmospheric pressure chemical vapor deposition deposited boron silicate glass and ex situ POCl 3 diffusion in a single high-temperature ste...

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Veröffentlicht in:	IEEE journal of photovoltaics 2024-09, Vol.14 (5), p.727-736
Hauptverfasser:	Choi, Wook-Jin, Ok, Young-Woo, Madani, Keeya, Upadhyaya, Vijaykumar D, Upadhyaya, Ajay D, Rounsaville, Brian, Padhamnath, Pradeep, Luna, Gabby De, Arcebal, John Derek, Rohatgi, Ajeet
Format:	Artikel
Sprache:	eng
Schlagworte:	Atmospheric pressure chemical vapor deposition Atmospheric pressure chemical vapor deposition (APCVD) Chemical vapor deposition codiffusion Codification Contact pressure Cost analysis device simulation Diffusion layers Diffusion processes ex situ doping High temperature low pressure chemical vapor deposition (LPCVD) passivated contacts Passivation Passivity Photovoltaic cells Polysilicon Precursors Silicon Silicon nitride Solar cells Temperature profiles Thickness tunnel oxide passivating contact (TOPCon)
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