Tunable interfacial Rashba spin-orbit coupling in asymmetric Al\(_x\)In\(_{1-x}\)Sb/InSb/CdTe quantum well heterostructures

The manipulation of Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown Al\(_x\)In\(_{1-x}\)Sb/InSb/CdTe quantum well heterostructures is reported. The effective band bending provides robust two-dimensional quantum confinement, while the unidirectional built-in electric field from...

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Veröffentlicht in:	arXiv.org 2024-08
Hauptverfasser:	Ruan, Hanzhi, Zhenghang Zhi, Wu, Yuyang, Liu, Jiuming, Huang, Puyang, Yao, Shan, Liu, Xinqi, Tang, Chenjia, Yao, Qi, Sun, Lu, Zhang, Yifan, Xiao, Yujie, Che, Renchao, Kou, Xufeng
Format:	Artikel
Sprache:	eng
Schlagworte:	Asymmetry Barrier layers Coupling (molecular) Electric field strength Electron mobility Epitaxial growth Heterostructures Indium antimonide Intermetallic compounds Low temperature Molecular beam epitaxy Quantum confinement Quantum wells Spin-orbit interactions Well engineering
Online-Zugang:	Volltext
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