Advanced Development Techniques for Extreme-Tight Pitch Patterning

In this study, we evaluated the impact of a new development method ESPERT™ on tight pitch contact holes patterns fabricated by extreme ultraviolet (EUV) and e-beam (EB) lithography. For EUV lithography, ESPERT™ demonstrated significant improvements in sensitivity along with reductions in roughness a...

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Veröffentlicht in:	Journal of Photopolymer Science and Technology 2024/06/25, Vol.37(3), pp.245-250
Hauptverfasser:	Tomori, Hikari, Dinh, Cong Que, Nagahara, Seiji, Kato, Kanzo, Kawakami, Shinichiro, Kuwahara, Yuhei, Okada, Soichiro, Cho, Kayoko, Nakamura, Junji, Yamasaki, Syuuya, Terada, Shoichi, Muramatsu, Makoto, Krawicz, Alexandra, McInerney, Kathleen, Antonovich, Nathan, Huli, Lior
Format:	Artikel
Sprache:	eng
Schlagworte:	Contact holes Development E-beam lithography Electron beams EUV lithography Lithography MOR Parameter sensitivity Qualitative analysis Roughness Tight pitch
Online-Zugang:	Volltext
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