Advanced Development Techniques for Extreme-Tight Pitch Patterning

In this study, we evaluated the impact of a new development method ESPERT™ on tight pitch contact holes patterns fabricated by extreme ultraviolet (EUV) and e-beam (EB) lithography. For EUV lithography, ESPERT™ demonstrated significant improvements in sensitivity along with reductions in roughness and defects. For EB lithography, the technology improved sensitivity while maintaining roughness levels. In addition, we attempted to provide a qualitative explanation of the characteristic behavior observed in LCDU by introducing a new parameter. This research demonstrates the practicality of ESPERT™ in tight pitch patterning, suggesting that ESPERT™ could play a crucial role in enhancing patterning quality.