Advanced Development Techniques for Extreme-Tight Pitch Patterning
In this study, we evaluated the impact of a new development method ESPERT™ on tight pitch contact holes patterns fabricated by extreme ultraviolet (EUV) and e-beam (EB) lithography. For EUV lithography, ESPERT™ demonstrated significant improvements in sensitivity along with reductions in roughness a...
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| Veröffentlicht in: | Journal of Photopolymer Science and Technology 2024/06/25, Vol.37(3), pp.245-250 |
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| container_end_page | 250 |
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| container_title | Journal of Photopolymer Science and Technology |
| container_volume | 37 |
| creator | Tomori, Hikari Dinh, Cong Que Nagahara, Seiji Kato, Kanzo Kawakami, Shinichiro Kuwahara, Yuhei Okada, Soichiro Cho, Kayoko Nakamura, Junji Yamasaki, Syuuya Terada, Shoichi Muramatsu, Makoto Krawicz, Alexandra McInerney, Kathleen Antonovich, Nathan Huli, Lior |
| description | In this study, we evaluated the impact of a new development method ESPERT™ on tight pitch contact holes patterns fabricated by extreme ultraviolet (EUV) and e-beam (EB) lithography. For EUV lithography, ESPERT™ demonstrated significant improvements in sensitivity along with reductions in roughness and defects. For EB lithography, the technology improved sensitivity while maintaining roughness levels. In addition, we attempted to provide a qualitative explanation of the characteristic behavior observed in LCDU by introducing a new parameter. This research demonstrates the practicality of ESPERT™ in tight pitch patterning, suggesting that ESPERT™ could play a crucial role in enhancing patterning quality. |
| doi_str_mv | 10.2494/photopolymer.37.245 |
| format | Article |
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For EUV lithography, ESPERT™ demonstrated significant improvements in sensitivity along with reductions in roughness and defects. For EB lithography, the technology improved sensitivity while maintaining roughness levels. In addition, we attempted to provide a qualitative explanation of the characteristic behavior observed in LCDU by introducing a new parameter. 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| source | J-STAGE Free; EZB-FREE-00999 freely available EZB journals; Free Full-Text Journals in Chemistry |
| subjects | Contact holes Development E-beam lithography Electron beams EUV lithography Lithography MOR Parameter sensitivity Qualitative analysis Roughness Tight pitch |
| title | Advanced Development Techniques for Extreme-Tight Pitch Patterning |
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