A novel X‐band CMOS asymmetric T/R switch with high‐pass TX arm and low‐pass RX arm

In this work, a novel asymmetric T/R switch is proposed. The operating principle and design equations of the proposed T/R switch topology are presented. Based on the proposed circuit topology, an X‐band asymmetric T/R switch is designed in 0.18‐µm CMOS. From 9 to 11 GHz, the measured isolation is higher than 32 dB and the measured insertion loss is less than 1.87 dB for the TX mode. At 10 GHz, the measured TX‐mode IP1dB$I\!P_\mathrm{1dB}$ is higher than 36 dBm. A novel X‐band CMOS asymmetric T/R switch is proposed. The TX and RX arms of the proposed switch assume the forms of high‐pass and low‐pass Pi‐networks, respectively.