A 5.5/12.5‐GHz concurrent dual‐band power amplifier MMIC in 0.25 μm GaAs technology

A concurrent 5.5/12.5‐GHz dual‐band power amplifier (PA) is designed and implemented in a 0.25 μm GaAs pseudomorphic high electron mobility transistor process. The PA is composed of two stages and adopts LC parallel and series networks for dual‐band matching. The efficiency of the PA is improved by...

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Veröffentlicht in:	Electronics letters 2022-04, Vol.58 (8), p.303-305
Hauptverfasser:	Xie, Chunshuang, Wu, Peng, Yuan, Yang, Zeng, Jialong, Tan, Cheng, Yu, Zhongjun
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplification Design Driver stages Efficiency High electron mobility transistors Power amplifiers Semiconductor devices Transistors
Online-Zugang:	Volltext
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