Robust 600 V high-voltage gate drive IC with low-temperature coefficient propagation delay time
A 600 V high-voltage gate drive IC (HVIC) using a novel robust isolation structure and a new delay circuit with low-temperature coefficient is proposed in this study. The novel isolation structure features with n−-well islands alternatively arranged in the p-well region and its breakdown voltage is...
Gespeichert in:
| Veröffentlicht in: | IET circuits, devices & systems devices & systems, 2014-11, Vol.8 (6), p.576-582 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 582 |
|---|---|
| container_issue | 6 |
| container_start_page | 576 |
| container_title | IET circuits, devices & systems |
| container_volume | 8 |
| creator | Chen, Jian Zhu, Jing Sun, Guodong Sun, Weifeng Dai, Weinan Huang, Zexiang |
| description | A 600 V high-voltage gate drive IC (HVIC) using a novel robust isolation structure and a new delay circuit with low-temperature coefficient is proposed in this study. The novel isolation structure features with n−-well islands alternatively arranged in the p-well region and its breakdown voltage is improved by about 7% (from 690 to 740 V) compared with the conventional isolation because of that the electrical field crowed in the p-well corner is ameliorated. The presented delay circuit used in the gate drive IC is composed of a temperature-insensitive ramp generator and a comparator. The typical turn-on/-off propagation delay time of the HVIC is 95 ns/85 ns and its maximum temperature coefficient is only 0.065 ns/°C. |
| doi_str_mv | 10.1049/iet-cds.2014.0058 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_24P</sourceid><recordid>TN_cdi_proquest_journals_3092275917</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3092275917</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3115-eb8766841c270f2ba3cbbc73a09985f56802c030615833a8d635eec6dd2e6913</originalsourceid><addsrcrecordid>eNqFkE9r2zAYh83YoF23D9CbYJft4OyVFMnyblv6Z4HCYAujNyHLrxMVJ_IkuSHfvjIpZZSOnaTD87z8eIrinMKMwrz-7DCVto0zBnQ-AxDqVXFKK0FLJWr1-umvbk-KtzHeZUIILk8L_dM3Y0xEApDfZOPWm_Le98mskaxNQtIGd49kuSB7lzak9_sy4XbAYNIYkFiPXeesw10iQ_CDyY7zO9Jibw4kuS2-K950po_4_vE9K1ZXl6vF9_Lmx_Vy8fWmtJxSUWKjKinVnFpWQccaw23T2IobqGslOiEVMAscJBWKc6NayQWilW3LUNaUnxUfj2fzij8jxqS3Llrse7NDP0ZNq5ozCUxUGf3wDL3zY9jlcZpDzVglajpR9EjZ4GMM2OkhuK0JB01BT8V1Lq5zcT0V11Px7Hw5OnvX4-H_gl5c_GLfrgAoiCx_OsoT9rRoebmaqL-coe0yW77A_nvYAxFyonE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3092275917</pqid></control><display><type>article</type><title>Robust 600 V high-voltage gate drive IC with low-temperature coefficient propagation delay time</title><source>Wiley-Blackwell Open Access Titles</source><creator>Chen, Jian ; Zhu, Jing ; Sun, Guodong ; Sun, Weifeng ; Dai, Weinan ; Huang, Zexiang</creator><creatorcontrib>Chen, Jian ; Zhu, Jing ; Sun, Guodong ; Sun, Weifeng ; Dai, Weinan ; Huang, Zexiang</creatorcontrib><description>A 600 V high-voltage gate drive IC (HVIC) using a novel robust isolation structure and a new delay circuit with low-temperature coefficient is proposed in this study. The novel isolation structure features with n−-well islands alternatively arranged in the p-well region and its breakdown voltage is improved by about 7% (from 690 to 740 V) compared with the conventional isolation because of that the electrical field crowed in the p-well corner is ameliorated. The presented delay circuit used in the gate drive IC is composed of a temperature-insensitive ramp generator and a comparator. The typical turn-on/-off propagation delay time of the HVIC is 95 ns/85 ns and its maximum temperature coefficient is only 0.065 ns/°C.</description><identifier>ISSN: 1751-858X</identifier><identifier>ISSN: 1751-8598</identifier><identifier>EISSN: 1751-8598</identifier><identifier>DOI: 10.1049/iet-cds.2014.0058</identifier><language>eng</language><publisher>Stevenage: The Institution of Engineering and Technology</publisher><subject>bipolar integrated circuits ; bipolar-CMOS-DMOS technology ; breakdown voltage ; CMOS ; CMOS integrated circuits ; Coefficients ; comparator ; comparators (circuits) ; Corners ; Delay ; delay circuit ; Delay circuits ; Delay time ; Gates (circuits) ; High voltages ; high-voltage gate drive IC ; Integrated circuits ; Islands ; isolation structure ; isolation technology ; Logic ; low-temperature coefficient propagation delay time ; Metal oxides ; p-well region ; power integrated circuits ; Propagation ; ramp generators ; robust isolation structure ; Robustness ; Semiconductors ; temperature-insensitive ramp generator ; Transistors ; Voltage ; voltage 600 V</subject><ispartof>IET circuits, devices & systems, 2014-11, Vol.8 (6), p.576-582</ispartof><rights>The Institution of Engineering and Technology</rights><rights>2014 The Institution of Engineering and Technology</rights><rights>Copyright The Institution of Engineering & Technology 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c3115-eb8766841c270f2ba3cbbc73a09985f56802c030615833a8d635eec6dd2e6913</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1049%2Fiet-cds.2014.0058$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1049%2Fiet-cds.2014.0058$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,11561,27923,27924,45573,45574,46051,46475</link.rule.ids><linktorsrc>$$Uhttps://onlinelibrary.wiley.com/doi/abs/10.1049%2Fiet-cds.2014.0058$$EView_record_in_Wiley-Blackwell$$FView_record_in_$$GWiley-Blackwell</linktorsrc></links><search><creatorcontrib>Chen, Jian</creatorcontrib><creatorcontrib>Zhu, Jing</creatorcontrib><creatorcontrib>Sun, Guodong</creatorcontrib><creatorcontrib>Sun, Weifeng</creatorcontrib><creatorcontrib>Dai, Weinan</creatorcontrib><creatorcontrib>Huang, Zexiang</creatorcontrib><title>Robust 600 V high-voltage gate drive IC with low-temperature coefficient propagation delay time</title><title>IET circuits, devices & systems</title><description>A 600 V high-voltage gate drive IC (HVIC) using a novel robust isolation structure and a new delay circuit with low-temperature coefficient is proposed in this study. The novel isolation structure features with n−-well islands alternatively arranged in the p-well region and its breakdown voltage is improved by about 7% (from 690 to 740 V) compared with the conventional isolation because of that the electrical field crowed in the p-well corner is ameliorated. The presented delay circuit used in the gate drive IC is composed of a temperature-insensitive ramp generator and a comparator. The typical turn-on/-off propagation delay time of the HVIC is 95 ns/85 ns and its maximum temperature coefficient is only 0.065 ns/°C.</description><subject>bipolar integrated circuits</subject><subject>bipolar-CMOS-DMOS technology</subject><subject>breakdown voltage</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>Coefficients</subject><subject>comparator</subject><subject>comparators (circuits)</subject><subject>Corners</subject><subject>Delay</subject><subject>delay circuit</subject><subject>Delay circuits</subject><subject>Delay time</subject><subject>Gates (circuits)</subject><subject>High voltages</subject><subject>high-voltage gate drive IC</subject><subject>Integrated circuits</subject><subject>Islands</subject><subject>isolation structure</subject><subject>isolation technology</subject><subject>Logic</subject><subject>low-temperature coefficient propagation delay time</subject><subject>Metal oxides</subject><subject>p-well region</subject><subject>power integrated circuits</subject><subject>Propagation</subject><subject>ramp generators</subject><subject>robust isolation structure</subject><subject>Robustness</subject><subject>Semiconductors</subject><subject>temperature-insensitive ramp generator</subject><subject>Transistors</subject><subject>Voltage</subject><subject>voltage 600 V</subject><issn>1751-858X</issn><issn>1751-8598</issn><issn>1751-8598</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqFkE9r2zAYh83YoF23D9CbYJft4OyVFMnyblv6Z4HCYAujNyHLrxMVJ_IkuSHfvjIpZZSOnaTD87z8eIrinMKMwrz-7DCVto0zBnQ-AxDqVXFKK0FLJWr1-umvbk-KtzHeZUIILk8L_dM3Y0xEApDfZOPWm_Le98mskaxNQtIGd49kuSB7lzak9_sy4XbAYNIYkFiPXeesw10iQ_CDyY7zO9Jibw4kuS2-K950po_4_vE9K1ZXl6vF9_Lmx_Vy8fWmtJxSUWKjKinVnFpWQccaw23T2IobqGslOiEVMAscJBWKc6NayQWilW3LUNaUnxUfj2fzij8jxqS3Llrse7NDP0ZNq5ozCUxUGf3wDL3zY9jlcZpDzVglajpR9EjZ4GMM2OkhuK0JB01BT8V1Lq5zcT0V11Px7Hw5OnvX4-H_gl5c_GLfrgAoiCx_OsoT9rRoebmaqL-coe0yW77A_nvYAxFyonE</recordid><startdate>201411</startdate><enddate>201411</enddate><creator>Chen, Jian</creator><creator>Zhu, Jing</creator><creator>Sun, Guodong</creator><creator>Sun, Weifeng</creator><creator>Dai, Weinan</creator><creator>Huang, Zexiang</creator><general>The Institution of Engineering and Technology</general><general>John Wiley & Sons, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>JQ2</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>201411</creationdate><title>Robust 600 V high-voltage gate drive IC with low-temperature coefficient propagation delay time</title><author>Chen, Jian ; Zhu, Jing ; Sun, Guodong ; Sun, Weifeng ; Dai, Weinan ; Huang, Zexiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3115-eb8766841c270f2ba3cbbc73a09985f56802c030615833a8d635eec6dd2e6913</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>bipolar integrated circuits</topic><topic>bipolar-CMOS-DMOS technology</topic><topic>breakdown voltage</topic><topic>CMOS</topic><topic>CMOS integrated circuits</topic><topic>Coefficients</topic><topic>comparator</topic><topic>comparators (circuits)</topic><topic>Corners</topic><topic>Delay</topic><topic>delay circuit</topic><topic>Delay circuits</topic><topic>Delay time</topic><topic>Gates (circuits)</topic><topic>High voltages</topic><topic>high-voltage gate drive IC</topic><topic>Integrated circuits</topic><topic>Islands</topic><topic>isolation structure</topic><topic>isolation technology</topic><topic>Logic</topic><topic>low-temperature coefficient propagation delay time</topic><topic>Metal oxides</topic><topic>p-well region</topic><topic>power integrated circuits</topic><topic>Propagation</topic><topic>ramp generators</topic><topic>robust isolation structure</topic><topic>Robustness</topic><topic>Semiconductors</topic><topic>temperature-insensitive ramp generator</topic><topic>Transistors</topic><topic>Voltage</topic><topic>voltage 600 V</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Jian</creatorcontrib><creatorcontrib>Zhu, Jing</creatorcontrib><creatorcontrib>Sun, Guodong</creatorcontrib><creatorcontrib>Sun, Weifeng</creatorcontrib><creatorcontrib>Dai, Weinan</creatorcontrib><creatorcontrib>Huang, Zexiang</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Computer Science Collection</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IET circuits, devices & systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, Jian</au><au>Zhu, Jing</au><au>Sun, Guodong</au><au>Sun, Weifeng</au><au>Dai, Weinan</au><au>Huang, Zexiang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Robust 600 V high-voltage gate drive IC with low-temperature coefficient propagation delay time</atitle><jtitle>IET circuits, devices & systems</jtitle><date>2014-11</date><risdate>2014</risdate><volume>8</volume><issue>6</issue><spage>576</spage><epage>582</epage><pages>576-582</pages><issn>1751-858X</issn><issn>1751-8598</issn><eissn>1751-8598</eissn><abstract>A 600 V high-voltage gate drive IC (HVIC) using a novel robust isolation structure and a new delay circuit with low-temperature coefficient is proposed in this study. The novel isolation structure features with n−-well islands alternatively arranged in the p-well region and its breakdown voltage is improved by about 7% (from 690 to 740 V) compared with the conventional isolation because of that the electrical field crowed in the p-well corner is ameliorated. The presented delay circuit used in the gate drive IC is composed of a temperature-insensitive ramp generator and a comparator. The typical turn-on/-off propagation delay time of the HVIC is 95 ns/85 ns and its maximum temperature coefficient is only 0.065 ns/°C.</abstract><cop>Stevenage</cop><pub>The Institution of Engineering and Technology</pub><doi>10.1049/iet-cds.2014.0058</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1751-858X |
| ispartof | IET circuits, devices & systems, 2014-11, Vol.8 (6), p.576-582 |
| issn | 1751-858X 1751-8598 1751-8598 |
| language | eng |
| recordid | cdi_proquest_journals_3092275917 |
| source | Wiley-Blackwell Open Access Titles |
| subjects | bipolar integrated circuits bipolar-CMOS-DMOS technology breakdown voltage CMOS CMOS integrated circuits Coefficients comparator comparators (circuits) Corners Delay delay circuit Delay circuits Delay time Gates (circuits) High voltages high-voltage gate drive IC Integrated circuits Islands isolation structure isolation technology Logic low-temperature coefficient propagation delay time Metal oxides p-well region power integrated circuits Propagation ramp generators robust isolation structure Robustness Semiconductors temperature-insensitive ramp generator Transistors Voltage voltage 600 V |
| title | Robust 600 V high-voltage gate drive IC with low-temperature coefficient propagation delay time |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T12%3A08%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_24P&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Robust%20600%20V%20high-voltage%20gate%20drive%20IC%20with%20low-temperature%20coefficient%20propagation%20delay%20time&rft.jtitle=IET%20circuits,%20devices%20&%20systems&rft.au=Chen,%20Jian&rft.date=2014-11&rft.volume=8&rft.issue=6&rft.spage=576&rft.epage=582&rft.pages=576-582&rft.issn=1751-858X&rft.eissn=1751-8598&rft_id=info:doi/10.1049/iet-cds.2014.0058&rft_dat=%3Cproquest_24P%3E3092275917%3C/proquest_24P%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3092275917&rft_id=info:pmid/&rfr_iscdi=true |