Robust 600 V high-voltage gate drive IC with low-temperature coefficient propagation delay time

A 600 V high-voltage gate drive IC (HVIC) using a novel robust isolation structure and a new delay circuit with low-temperature coefficient is proposed in this study. The novel isolation structure features with n−-well islands alternatively arranged in the p-well region and its breakdown voltage is improved by about 7% (from 690 to 740 V) compared with the conventional isolation because of that the electrical field crowed in the p-well corner is ameliorated. The presented delay circuit used in the gate drive IC is composed of a temperature-insensitive ramp generator and a comparator. The typical turn-on/-off propagation delay time of the HVIC is 95 ns/85 ns and its maximum temperature coefficient is only 0.065 ns/°C.