A 10-100-GHz Wideband Amplifier With Low-Impedance Coupled Lines in SiGe BiCMOS

A 10-100-GHz Wideband Amplifier With Low-Impedance Coupled Lines in SiGe BiCMOS

This letter presents a mm-wave wideband amplifier implemented in a 130-nm SiGe BiCMOS technology operating up to 100 GHz. For the wideband operation, a new wideband technique based on low-impedance coupled line structure was proposed and adopted to the amplifier in combination with other bandwidth e...

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Veröffentlicht in:IEEE microwave and wireless technology letters (Print) 2023-09, Vol.33 (9), p.1-4
Hauptverfasser: Kim, Doyoon, Son, Heekang, Kim, Jungsoo, Lee, Jaeman, Zhao, Yan, Hadi, Richard Al, Kaynak, Mehmet, Chang, Mau-Chung Frank, Rieh, Jae-Sung
Format: Artikel
Sprache:eng
Schlagworte:
Amplification
Amplifiers
Bandwidth
Bandwidths
Broadband
Broadband amplifiers
coupled mode analysis
Impedance
Impedance matching
Millimeter waves
Resistors
Silicon germanides
silicon germanium
Topology
Wideband
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Zusammenfassung:This letter presents a mm-wave wideband amplifier implemented in a 130-nm SiGe BiCMOS technology operating up to 100 GHz. For the wideband operation, a new wideband technique based on low-impedance coupled line structure was proposed and adopted to the amplifier in combination with other bandwidth extension techniques. The enhancement of the amplifier bandwidth with the low-impedance coupled lines employed at the input and output matching networks is introduced in detail along with methodologies for actual implementation. The fabricated amplifier showed a peak gain of 13.2 dB with a 3-dB bandwidth of 90 GHz, covering from 10 to 100 GHz. The power consumption of the amplifier is 117 mW. The chip size is 865 \times 344 \mu m ^{2} excluding probing pads.
ISSN:2771-957X
2771-9588
DOI:10.1109/LMWT.2023.3288114