Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz

In this letter, we report on Schottky barrier (SB) gate N-Polar GaN-on-sapphire deep recess high-electron-mobility transistors (HEMTs) with excellent dc, small signal and large signal performance. A device with a gate length of 77 nm demonstrates a very high extrinsic dc transconductance ( g_{m} ) of 917 mS/mm at V_{\mathbf {D}} of 3 V, nearly twice as much as prior N-Polar GaN metal-insulator-semiconductor (MIS) HEMTs, with a low gate current of below 40~\mu \text{A} /mm up to +1~V_{\mathbf {G}} . For the same device, the peak intrinsic RF g_{m} is 1.17 S/mm. A device with a 50 nm gate length demonstrates the highest N-Polar deep recess HEMT peak f_{T} of 176 GHz and peak f_{\mathbf {MAX}} of 307 GHz. Biased at 10 V and 0.25 A/mm (class-AB), the 77 nm gate length device exhibits a record 94 GHz large signal performance with a linear gain of 10.5 dB, 50.2% peak power-added efficiency (PAE) with 2.8 W/mm power and 3.2 W/mm peak power with 46.3% PAE and 6.1 dB compressed gain. The outstanding large signal performance on low-cost sapphire substrate is very attractive and it paves the way for the next generation high-efficiency wireless communication systems.