A 100 GBd PAM-4 Combiner and Driver in SiGe BiCMOS

A 100 GBd PAM-4 Combiner and Driver in SiGe BiCMOS

In this letter, we present an analog PAM-4 combiner and driver circuit based on a current steering output stage designed in a 130 nm SiGe BiCMOS technology. The circuit features an on-chip active balun with more than 67 GHz bandwidth. The output stage supports an adjustable PAM-4 level spacing. It c...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE microwave and wireless technology letters (Print) 2023-09, Vol.33 (9), p.1-4
Hauptverfasser: Bohn, Christian, Kaynak, Mehmet, Zwick, Thomas, Ulusoy, Ahmet Cagri
Format: Artikel
Sprache:eng
Schlagworte:
Analog circuits
Baluns
Bandwidth
BiCMOS integrated circuits
broadband amplifiers
Delays
Driver circuits
Modulation
PAM-4
Semiconductor device measurement
Silicon germanides
Silicon germanium
Steering
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this letter, we present an analog PAM-4 combiner and driver circuit based on a current steering output stage designed in a 130 nm SiGe BiCMOS technology. The circuit features an on-chip active balun with more than 67 GHz bandwidth. The output stage supports an adjustable PAM-4 level spacing. It consumes 315 mW and delivers 2 Vpp,diff in a 100 \Omega load. Operation of up to 100 GBd has been verified by measured eye diagrams.
ISSN:2771-957X
2771-9588
DOI:10.1109/LMWT.2023.3293040