Studying the Effect of Annealing Temperature and Thickness on Electrical Properties of PZT Films Prepared by Sol-Gel Technique
Lead Zirconate Titanate (PZT) film was synthesized by sol-gel technique on a silicon substrate. The raw materials used to synthesize the solution of PZT consist of lead acetate, zirconate nitrate and titanate (IV) isopropoxide and 2methoxy ethanol is used as a stabilizer for Ti structure. Acetic aci...
Gespeichert in:
| Veröffentlicht in: | Solid state phenomena 2023-03, Vol.341, p.49-55 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 55 |
|---|---|
| container_issue | |
| container_start_page | 49 |
| container_title | Solid state phenomena |
| container_volume | 341 |
| creator | Hachim, Faten K. Gatea, Hamed Alwan |
| description | Lead Zirconate Titanate (PZT) film was synthesized by sol-gel technique on a silicon substrate. The raw materials used to synthesize the solution of PZT consist of lead acetate, zirconate nitrate and titanate (IV) isopropoxide and 2methoxy ethanol is used as a stabilizer for Ti structure. Acetic acid is the solvent used to solve lat acetate and zirconate nitrate. The XRD pattern of the sample shows that the film has a tetragonal phase with a perovskite structure. FESEM revealed the surface morphologies and the cross-section of the film. The different thicknesses of film and annealing temperatures are investigated in this work. The dielectric constant was measured at 1 kHz, PZT films have a dielectric constant value ( 312-552 ) and a dielectric loss (0.02-0.08) at ambient temperature. Keywords: PZT film; Lead zirconated titanate; ferroelectric properties; dielectric constant. |
| doi_str_mv | 10.4028/p-93blco |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_3091940311</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3091940311</sourcerecordid><originalsourceid>FETCH-LOGICAL-c166o-ffe98b72a7282efce4173ec6b136fe29e060e480d6ac903f1f24ca9599af60fe3</originalsourceid><addsrcrecordid>eNplkE9Lw0AQxRdRsFbBj7DgRYTo_olJ9lhKWwXBQuPFS9hsZm1quht3N4de_OxuieDB0wzDb97MewhdU3KfElY89IngdafsCZrQLGOJyHNxGntCWUK4SM_Rhfc7QjgtaDFB35swNIfWfOCwBbzQGlTAVuOZMSC747yEfQ9OhsEBlqbB5bZVnwa8x9bgRRd51yrZ4bWzkQst-OP--r3Ey7bb-ziHXjpocH3AG9slK-iiptqa9muAS3SmZefh6rdO0dtyUc6fkpfX1fN89pKoaMIm8S1R1DmTOSsYaAUpzTmorKY808AEkIxAWpAmk0oQrqlmqZLiUQipM6KBT9HNqNs7G8_6UO3s4Ew8WXEiqEhjHjRStyOlnPXega561-6lO1SUVMd0q74a043o3YgGJ40P0c-f4j_4B_qcfbY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3091940311</pqid></control><display><type>article</type><title>Studying the Effect of Annealing Temperature and Thickness on Electrical Properties of PZT Films Prepared by Sol-Gel Technique</title><source>Scientific.net Journals</source><creator>Hachim, Faten K. ; Gatea, Hamed Alwan</creator><creatorcontrib>Hachim, Faten K. ; Gatea, Hamed Alwan</creatorcontrib><description>Lead Zirconate Titanate (PZT) film was synthesized by sol-gel technique on a silicon substrate. The raw materials used to synthesize the solution of PZT consist of lead acetate, zirconate nitrate and titanate (IV) isopropoxide and 2methoxy ethanol is used as a stabilizer for Ti structure. Acetic acid is the solvent used to solve lat acetate and zirconate nitrate. The XRD pattern of the sample shows that the film has a tetragonal phase with a perovskite structure. FESEM revealed the surface morphologies and the cross-section of the film. The different thicknesses of film and annealing temperatures are investigated in this work. The dielectric constant was measured at 1 kHz, PZT films have a dielectric constant value ( 312-552 ) and a dielectric loss (0.02-0.08) at ambient temperature. Keywords: PZT film; Lead zirconated titanate; ferroelectric properties; dielectric constant.</description><identifier>ISSN: 1012-0394</identifier><identifier>ISSN: 1662-9779</identifier><identifier>EISSN: 1662-9779</identifier><identifier>DOI: 10.4028/p-93blco</identifier><language>eng</language><publisher>Zurich: Trans Tech Publications Ltd</publisher><subject>Acetic acid ; Ambient temperature ; Annealing ; Dielectric loss ; Electrical properties ; Ethanol ; Lead acetates ; Lead zirconate titanates ; Permittivity ; Perovskite structure ; Perovskites ; Raw materials ; Silicon substrates ; Sol-gel processes ; Stabilizers (agents) ; Synthesis ; Thickness measurement</subject><ispartof>Solid state phenomena, 2023-03, Vol.341, p.49-55</ispartof><rights>2023 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c166o-ffe98b72a7282efce4173ec6b136fe29e060e480d6ac903f1f24ca9599af60fe3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/6775?width=600</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Hachim, Faten K.</creatorcontrib><creatorcontrib>Gatea, Hamed Alwan</creatorcontrib><title>Studying the Effect of Annealing Temperature and Thickness on Electrical Properties of PZT Films Prepared by Sol-Gel Technique</title><title>Solid state phenomena</title><description>Lead Zirconate Titanate (PZT) film was synthesized by sol-gel technique on a silicon substrate. The raw materials used to synthesize the solution of PZT consist of lead acetate, zirconate nitrate and titanate (IV) isopropoxide and 2methoxy ethanol is used as a stabilizer for Ti structure. Acetic acid is the solvent used to solve lat acetate and zirconate nitrate. The XRD pattern of the sample shows that the film has a tetragonal phase with a perovskite structure. FESEM revealed the surface morphologies and the cross-section of the film. The different thicknesses of film and annealing temperatures are investigated in this work. The dielectric constant was measured at 1 kHz, PZT films have a dielectric constant value ( 312-552 ) and a dielectric loss (0.02-0.08) at ambient temperature. Keywords: PZT film; Lead zirconated titanate; ferroelectric properties; dielectric constant.</description><subject>Acetic acid</subject><subject>Ambient temperature</subject><subject>Annealing</subject><subject>Dielectric loss</subject><subject>Electrical properties</subject><subject>Ethanol</subject><subject>Lead acetates</subject><subject>Lead zirconate titanates</subject><subject>Permittivity</subject><subject>Perovskite structure</subject><subject>Perovskites</subject><subject>Raw materials</subject><subject>Silicon substrates</subject><subject>Sol-gel processes</subject><subject>Stabilizers (agents)</subject><subject>Synthesis</subject><subject>Thickness measurement</subject><issn>1012-0394</issn><issn>1662-9779</issn><issn>1662-9779</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNplkE9Lw0AQxRdRsFbBj7DgRYTo_olJ9lhKWwXBQuPFS9hsZm1quht3N4de_OxuieDB0wzDb97MewhdU3KfElY89IngdafsCZrQLGOJyHNxGntCWUK4SM_Rhfc7QjgtaDFB35swNIfWfOCwBbzQGlTAVuOZMSC747yEfQ9OhsEBlqbB5bZVnwa8x9bgRRd51yrZ4bWzkQst-OP--r3Ey7bb-ziHXjpocH3AG9slK-iiptqa9muAS3SmZefh6rdO0dtyUc6fkpfX1fN89pKoaMIm8S1R1DmTOSsYaAUpzTmorKY808AEkIxAWpAmk0oQrqlmqZLiUQipM6KBT9HNqNs7G8_6UO3s4Ew8WXEiqEhjHjRStyOlnPXega561-6lO1SUVMd0q74a043o3YgGJ40P0c-f4j_4B_qcfbY</recordid><startdate>20230315</startdate><enddate>20230315</enddate><creator>Hachim, Faten K.</creator><creator>Gatea, Hamed Alwan</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20230315</creationdate><title>Studying the Effect of Annealing Temperature and Thickness on Electrical Properties of PZT Films Prepared by Sol-Gel Technique</title><author>Hachim, Faten K. ; Gatea, Hamed Alwan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c166o-ffe98b72a7282efce4173ec6b136fe29e060e480d6ac903f1f24ca9599af60fe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Acetic acid</topic><topic>Ambient temperature</topic><topic>Annealing</topic><topic>Dielectric loss</topic><topic>Electrical properties</topic><topic>Ethanol</topic><topic>Lead acetates</topic><topic>Lead zirconate titanates</topic><topic>Permittivity</topic><topic>Perovskite structure</topic><topic>Perovskites</topic><topic>Raw materials</topic><topic>Silicon substrates</topic><topic>Sol-gel processes</topic><topic>Stabilizers (agents)</topic><topic>Synthesis</topic><topic>Thickness measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hachim, Faten K.</creatorcontrib><creatorcontrib>Gatea, Hamed Alwan</creatorcontrib><collection>CrossRef</collection><jtitle>Solid state phenomena</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hachim, Faten K.</au><au>Gatea, Hamed Alwan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Studying the Effect of Annealing Temperature and Thickness on Electrical Properties of PZT Films Prepared by Sol-Gel Technique</atitle><jtitle>Solid state phenomena</jtitle><date>2023-03-15</date><risdate>2023</risdate><volume>341</volume><spage>49</spage><epage>55</epage><pages>49-55</pages><issn>1012-0394</issn><issn>1662-9779</issn><eissn>1662-9779</eissn><abstract>Lead Zirconate Titanate (PZT) film was synthesized by sol-gel technique on a silicon substrate. The raw materials used to synthesize the solution of PZT consist of lead acetate, zirconate nitrate and titanate (IV) isopropoxide and 2methoxy ethanol is used as a stabilizer for Ti structure. Acetic acid is the solvent used to solve lat acetate and zirconate nitrate. The XRD pattern of the sample shows that the film has a tetragonal phase with a perovskite structure. FESEM revealed the surface morphologies and the cross-section of the film. The different thicknesses of film and annealing temperatures are investigated in this work. The dielectric constant was measured at 1 kHz, PZT films have a dielectric constant value ( 312-552 ) and a dielectric loss (0.02-0.08) at ambient temperature. Keywords: PZT film; Lead zirconated titanate; ferroelectric properties; dielectric constant.</abstract><cop>Zurich</cop><pub>Trans Tech Publications Ltd</pub><doi>10.4028/p-93blco</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1012-0394 |
| ispartof | Solid state phenomena, 2023-03, Vol.341, p.49-55 |
| issn | 1012-0394 1662-9779 1662-9779 |
| language | eng |
| recordid | cdi_proquest_journals_3091940311 |
| source | Scientific.net Journals |
| subjects | Acetic acid Ambient temperature Annealing Dielectric loss Electrical properties Ethanol Lead acetates Lead zirconate titanates Permittivity Perovskite structure Perovskites Raw materials Silicon substrates Sol-gel processes Stabilizers (agents) Synthesis Thickness measurement |
| title | Studying the Effect of Annealing Temperature and Thickness on Electrical Properties of PZT Films Prepared by Sol-Gel Technique |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T12%3A40%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Studying%20the%20Effect%20of%20Annealing%20Temperature%20and%20Thickness%20on%20Electrical%20Properties%20of%20PZT%20Films%20Prepared%20by%20Sol-Gel%20Technique&rft.jtitle=Solid%20state%20phenomena&rft.au=Hachim,%20Faten%20K.&rft.date=2023-03-15&rft.volume=341&rft.spage=49&rft.epage=55&rft.pages=49-55&rft.issn=1012-0394&rft.eissn=1662-9779&rft_id=info:doi/10.4028/p-93blco&rft_dat=%3Cproquest_cross%3E3091940311%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3091940311&rft_id=info:pmid/&rfr_iscdi=true |