Studying the Effect of Annealing Temperature and Thickness on Electrical Properties of PZT Films Prepared by Sol-Gel Technique
Lead Zirconate Titanate (PZT) film was synthesized by sol-gel technique on a silicon substrate. The raw materials used to synthesize the solution of PZT consist of lead acetate, zirconate nitrate and titanate (IV) isopropoxide and 2methoxy ethanol is used as a stabilizer for Ti structure. Acetic aci...
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Veröffentlicht in: | Solid state phenomena 2023-03, Vol.341, p.49-55 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Lead Zirconate Titanate (PZT) film was synthesized by sol-gel technique on a silicon substrate. The raw materials used to synthesize the solution of PZT consist of lead acetate, zirconate nitrate and titanate (IV) isopropoxide and 2methoxy ethanol is used as a stabilizer for Ti structure. Acetic acid is the solvent used to solve lat acetate and zirconate nitrate. The XRD pattern of the sample shows that the film has a tetragonal phase with a perovskite structure. FESEM revealed the surface morphologies and the cross-section of the film. The different thicknesses of film and annealing temperatures are investigated in this work. The dielectric constant was measured at 1 kHz, PZT films have a dielectric constant value ( 312-552 ) and a dielectric loss (0.02-0.08) at ambient temperature. Keywords: PZT film; Lead zirconated titanate; ferroelectric properties; dielectric constant. |
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ISSN: | 1012-0394 1662-9779 1662-9779 |
DOI: | 10.4028/p-93blco |