The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center

The TS center is a promising temperature-stable photoluminescence center in 4H SiC. Here we investigate the carbon di-vacancy-antisite complex inthe framework of ab initio theory as a tentative model for the TS center. We identify optical transitionsof the basal complexes with the TS lines based on...

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Veröffentlicht in:	Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum Defect and diffusion forum, 2023-06, Vol.426, p.43-48
Hauptverfasser:	Kobayashi, Takuma, Schober, Maximilian, Jungwirth, Nicolas, Bockstedte, Michel, Krieger, Michael, Lehmeyer, Johannes A.F., Weber, Heiko B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon Divacancies Optical properties Photoluminescence
Online-Zugang:	Volltext
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