The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center

The TS center is a promising temperature-stable photoluminescence center in 4H SiC. Here we investigate the carbon di-vacancy-antisite complex inthe framework of ab initio theory as a tentative model for the TS center. We identify optical transitionsof the basal complexes with the TS lines based on...

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Veröffentlicht in:Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum Defect and diffusion forum, 2023-06, Vol.426, p.43-48
Hauptverfasser: Kobayashi, Takuma, Schober, Maximilian, Jungwirth, Nicolas, Bockstedte, Michel, Krieger, Michael, Lehmeyer, Johannes A.F., Weber, Heiko B.
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Sprache:eng
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Zusammenfassung:The TS center is a promising temperature-stable photoluminescence center in 4H SiC. Here we investigate the carbon di-vacancy-antisite complex inthe framework of ab initio theory as a tentative model for the TS center. We identify optical transitionsof the basal complexes with the TS lines based on excitation energies, Stark shifts, and radiative char acteristics. Charge-state-control of the TS center in p- and n-type Schottky contacts is demonstrated. Our experimental findings are consistent with the positively charged complex.
ISSN:1012-0386
1662-9507
1662-9507
DOI:10.4028/p-90qste