Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiС

Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiС

We present a detailed study of the behavior of the photoluminescence (PL) of the TS color center in 4H-SiC under controlled mechanical strain. We have investigated the TS1 line under varying strain, including its reaction to compression and tension. We use emission polarization measurements to gain...

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Veröffentlicht in:Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum Defect and diffusion forum, 2023-06, Vol.426, p.17-21
Hauptverfasser: Weber, Heiko B., Bornträger, Titus, Fuchs, Alexander, Lehmeyer, Johannes A.F., Krieger, Michael, Popp, Matthias
Format: Artikel
Sprache:eng
Schlagworte:
Color centers
Photoluminescence
Strain
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Zusammenfassung:We present a detailed study of the behavior of the photoluminescence (PL) of the TS color center in 4H-SiC under controlled mechanical strain. We have investigated the TS1 line under varying strain, including its reaction to compression and tension. We use emission polarization measurements to gain access to the orientation of the underlying defects. We put our results in context with previous findings and find good agreement, corroborating the proposed microscopic model.
ISSN:1012-0386
1662-9507
1662-9507
DOI:10.4028/p-02xh85