Plasma-induced N doping and carbon vacancies in a self-supporting 3C-SiC photoanode for efficient photoelectrochemical water oxidation

Due to its suitable bandgap and excellent stability, 3C-SiC is being investigated as one of the promising candidates for photoelectrochemical (PEC) water oxidation. However, the limited surface activity and short carrier lifetime prevent 3C-SiC photoanodes from facilitating efficient PEC water split...

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Veröffentlicht in:	Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2024-07, Vol.12 (3), p.1921-19211
Hauptverfasser:	Wu, Linyi, Guan, Shuchang, Zhou, Binghua, Guo, Shien, Wang, Jie, Wu, Ling, Hong Melvin, Gan Jet, Ortiz-Medina, Josue, Wang, Mingxi, Ogata, Hironori, Tanemura, Masaki, Kim, Yoong Ahm, Terrones, Mauricio, Endo, Morinobu, Wang, Zhipeng
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon Carrier lifetime Charge efficiency Charge transfer Crystal structure Doping Electronic structure Energy gap Lattice vacancies Nitrogen plasma Optical properties Oxidation Photoanodes Photoelectric effect Plasma Silicon carbide Surface activity Water splitting
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