P‐142: Confocal Photoluminescence and Electroluminescence of Blue InGaN/GaN Nanorod Light‐emitting Diodes with Different Passivation Approaches

The sidewall passivation is essential to achieve high micro light‐emitting diode (LED) efficiency. We investigated different sidewall passivation strategies on InGaN/GaN blue nLED, including Thermal ALD and PEALD Al2O3. The characterization of temperature and laser excitation‐dependent photoluminesc...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2024-06, Vol.55 (1), p.1935-1938
Hauptverfasser:	Le, Quang Trung, Shin, Youngwook, Bak, Byeong-U, Hwang, Jun Seok, Kim, Jaekyun
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Dielectrophoresis force Gallium nitrides GaN/InGaN Indium gallium nitrides Light emitting diodes Micro LED nanorod LED Nanorods Passivity Photoluminescence PL spectra Sidewall Passivation Temperature dependence Thermodynamic properties TRPL
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