P‐142: Confocal Photoluminescence and Electroluminescence of Blue InGaN/GaN Nanorod Light‐emitting Diodes with Different Passivation Approaches

P‐142: Confocal Photoluminescence and Electroluminescence of Blue InGaN/GaN Nanorod Light‐emitting Diodes with Different Passivation Approaches

The sidewall passivation is essential to achieve high micro light‐emitting diode (LED) efficiency. We investigated different sidewall passivation strategies on InGaN/GaN blue nLED, including Thermal ALD and PEALD Al2O3. The characterization of temperature and laser excitation‐dependent photoluminesc...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2024-06, Vol.55 (1), p.1935-1938
Hauptverfasser: Le, Quang Trung, Shin, Youngwook, Bak, Byeong-U, Hwang, Jun Seok, Kim, Jaekyun
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum oxide
Dielectrophoresis force
Gallium nitrides
GaN/InGaN
Indium gallium nitrides
Light emitting diodes
Micro LED
nanorod LED
Nanorods
Passivity
Photoluminescence
PL spectra
Sidewall Passivation
Temperature dependence
Thermodynamic properties
TRPL
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Zusammenfassung:The sidewall passivation is essential to achieve high micro light‐emitting diode (LED) efficiency. We investigated different sidewall passivation strategies on InGaN/GaN blue nLED, including Thermal ALD and PEALD Al2O3. The characterization of temperature and laser excitation‐dependent photoluminescence (PL) and time‐resolved photoluminescence (TRPL) were observed to determine the efficiency. Sidewall passivated‐nLED device was fabricated and characterized. The device exhibits extremely high brightness, even at low operation current.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.17969