29‐4: TOF SIMS for OLED Film 3D Detection and Real‐Time Failure Analysis
By analyzing OLED film layers using the TOF SIMS method with 3D imaging capability, we can effectively improve the detection of OLED defects and understand the constitutive relationship. This inspection method can be integrated into the production line to realize process improvement and defect inter...
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Veröffentlicht in: | SID International Symposium Digest of technical papers 2024-06, Vol.55 (1), p.377-381 |
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container_title | SID International Symposium Digest of technical papers |
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creator | Zheng, Kening Fu, Qiang Shi, Bo Chen, Long Gao, Dongyu Zhu, Li Li, Langtao Wang, Dengyu Pan, Xuenan Zhang, Kai Yang, Dongfang Tang, Guoqiang Jin, Fujiang |
description | By analyzing OLED film layers using the TOF SIMS method with 3D imaging capability, we can effectively improve the detection of OLED defects and understand the constitutive relationship. This inspection method can be integrated into the production line to realize process improvement and defect interception during mass production. |
doi_str_mv | 10.1002/sdtp.17536 |
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subjects | Constitutive relationships Defects Doping analysis Failure Analysis Mass production Organic Light‐Emitting Diode(OLED) Production lines Time of Flight Secondary Ion Mass Spectrometry(TOF SIMS) Yb cathode blocking layer |
title | 29‐4: TOF SIMS for OLED Film 3D Detection and Real‐Time Failure Analysis |
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