29‐4: TOF SIMS for OLED Film 3D Detection and Real‐Time Failure Analysis

By analyzing OLED film layers using the TOF SIMS method with 3D imaging capability, we can effectively improve the detection of OLED defects and understand the constitutive relationship. This inspection method can be integrated into the production line to realize process improvement and defect inter...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2024-06, Vol.55 (1), p.377-381
Hauptverfasser: Zheng, Kening, Fu, Qiang, Shi, Bo, Chen, Long, Gao, Dongyu, Zhu, Li, Li, Langtao, Wang, Dengyu, Pan, Xuenan, Zhang, Kai, Yang, Dongfang, Tang, Guoqiang, Jin, Fujiang
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container_end_page 381
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container_title SID International Symposium Digest of technical papers
container_volume 55
creator Zheng, Kening
Fu, Qiang
Shi, Bo
Chen, Long
Gao, Dongyu
Zhu, Li
Li, Langtao
Wang, Dengyu
Pan, Xuenan
Zhang, Kai
Yang, Dongfang
Tang, Guoqiang
Jin, Fujiang
description By analyzing OLED film layers using the TOF SIMS method with 3D imaging capability, we can effectively improve the detection of OLED defects and understand the constitutive relationship. This inspection method can be integrated into the production line to realize process improvement and defect interception during mass production.
doi_str_mv 10.1002/sdtp.17536
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source Wiley-Blackwell Journals
subjects Constitutive relationships
Defects
Doping analysis
Failure Analysis
Mass production
Organic Light‐Emitting Diode(OLED)
Production lines
Time of Flight Secondary Ion Mass Spectrometry(TOF SIMS)
Yb cathode blocking layer
title 29‐4: TOF SIMS for OLED Film 3D Detection and Real‐Time Failure Analysis
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