Coherent manipulation of three-dimensional probe absorption spectrum in a strained GaAs-AlGaAs-InAs semiconductor quantum dot

We investigate three-dimensional (3D) probe absorption spectrum in a three-level ladder-type quantum dot nanostructure, which is driven by a superposition of three mutually perpendicular standing-wave fields and a traveling- wave field. Due to the position-dependent light-matter interaction, the probe absorption is sensitive to the position in 3D space. It is found that the 3D distribution of the probe absorption spectrum can be easily controlled via adjusting the detuning of the probe field and the intensity of the position-dependent control field. More importantly, the maximal probe absorption can be localized in different positions via tuning the phases of the three standing-wave fields. The scheme may provide some technological applications in solid-state optoelectronics.