Continuous-Wave Lasing Characteristics of Ho :GdVO4 Crystal Under Diode-Pumping Architecture

In this paper, we investigate the continuous-wave lasing characteristics of Ho :GdVO 4 crystal under diode-pumping conditions. Using a 1.0 at.%-doped crystal, we obtain the maximum output power equal to 9.0 W at 2047.9 nm, with an absorbed pump power of 28.2 W. The slope efficiency and optical effic...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of Russian laser research 2024-03, Vol.45 (2), p.184-188
Hauptverfasser: Wu, Jiaze, Duan, Xiaoming, Ding, Yu, Zhang, Wensheng, Yuan, Jihe, Shen, Zuochun
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper, we investigate the continuous-wave lasing characteristics of Ho :GdVO 4 crystal under diode-pumping conditions. Using a 1.0 at.%-doped crystal, we obtain the maximum output power equal to 9.0 W at 2047.9 nm, with an absorbed pump power of 28.2 W. The slope efficiency and optical efficiency measured with respect to the absorbed pump power are 50.7% and 31.9%, respectively. In addition, we estimate the beam quality factor at the maximum output level to be about 1.8.
ISSN:1071-2836
1573-8760
DOI:10.1007/s10946-024-10202-9