Continuous-Wave Lasing Characteristics of Ho :GdVO4 Crystal Under Diode-Pumping Architecture
In this paper, we investigate the continuous-wave lasing characteristics of Ho :GdVO 4 crystal under diode-pumping conditions. Using a 1.0 at.%-doped crystal, we obtain the maximum output power equal to 9.0 W at 2047.9 nm, with an absorbed pump power of 28.2 W. The slope efficiency and optical effic...
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Veröffentlicht in: | Journal of Russian laser research 2024-03, Vol.45 (2), p.184-188 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this paper, we investigate the continuous-wave lasing characteristics of Ho :GdVO
4
crystal under diode-pumping conditions. Using a 1.0 at.%-doped crystal, we obtain the maximum output power equal to 9.0 W at 2047.9 nm, with an absorbed pump power of 28.2 W. The slope efficiency and optical efficiency measured with respect to the absorbed pump power are 50.7% and 31.9%, respectively. In addition, we estimate the beam quality factor at the maximum output level to be about 1.8. |
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ISSN: | 1071-2836 1573-8760 |
DOI: | 10.1007/s10946-024-10202-9 |