High‐Performance SiC/Graphene UV‐Visible Band Photodetectors with Grating Structure and Asymmetrical Electrodes for Optoelectronic Logic Gate

High‐quality epitaxial graphene is prepared on semi‐insulated 4H‐SiC (0001) by ultra‐high vacuum thermal decomposition method and used in graphene/SiC/graphene ultraviolet‐visible dual‐band photodetectors. The dual‐band detector exhibits an extremely low dark current (5.2 × 10−14 A) and a peak responsivity of 1.17 A W−1 corresponding to an external quantum efficiency of 518%. A high detectivity of 3.14 × 1014 Jones is achieved under 280 nm light illumination at 30 V, while a high response speed is obtained with a rise time of 25.17 ns and a decay time of 540.10 ns. The detector shows a responsivity of 1.4 × 10−5 A W−1 and a detectivity of 6.5 × 109 Jones under 430 nm light illumination. The dual‐band detector equipped with SiC grating and asymmetrical graphene electrodes is demonstrated for high‐performance optoelectronic logic “AND” gate with high detectivity at 280 and 430 nm. A UV‐visible dual‐band photodetector with grating structure and asymmetrical graphene electrodes is introduced. Light absorption is improved by grating structure. More importantly, the electric field distribution of the device is optimized by asymmetrical electrodes, leading to a complete depletion region and the local avalanche effect. The device exhibits high optoelectronic performance and can be used as optoelectronic logic gate.