Systematic Study and Review of InP‐based Tera‐Hertz‐ICs Fabrication Process Technology for Beyond 5G/6G Wireless Communication Networks

Next‐generation “Beyond 5G (B5G)/6G” wireless network systems have been researched and developed for meeting the rapid growth of mobile traffic. A high‐yield fabrication process of InP‐based transistors and tera‐hertz monolithic integrated circuits with 300 GHz operation is reported, which is a candidate frequency for “Beyond 5G/6G” network systems. The main focus is on a high‐yield and reproductive fabrication process of InP‐based high electron mobility transistors (HEMTs) while revisiting previous studies. The DC and radio frequency characteristics of fabricated InP‐HEMTs from the viewpoint of integrating circuits are described. Then, high‐frequency performances of ft = 280 GHz and fmax = 860 GHz in the bias conditions of Vgs/Vds = 0.2/1.1 V with good uniformity are obtained. Finally, InP‐based 300 GHz‐band mixer and power amplifiers are introduced, to which a backside process is also applied for ensuring their stability and enhancing output power. The focus is on a high‐yield and reproductive fabrication process of InP‐based high electron mobility transistors with ft = 280 GHz and fmax = 860 GHz with good uniformity. InP‐based 300 GHz‐band mixer and power amplifiers are introduced, to which a backside process is also applied for ensuring their stability and enhancing output power.