Augmented Optoelectronic Quantum Dot‐Enhanced Heterogeneous IGZO‐Te Photodiode for Artificial Synaptic Image Processing Applications

This study presents a novel photodiode technology with augmented optoelectronic capabilities through the incorporation of quantum dots (QDs). The photodiode, composed of Indium Gallium Zinc Oxide‐Tellurium (IGZO‐Te), is engineered for enhanced light sensitivity and tailored optoelectronic interactions. The primary application of this advanced photodiode lies in the domain of artificial intelligence and machine learning, where it plays a pivotal role in simulating synaptic connections for image processing tasks. Due to the exceptional optical and electrical properties of the IGZO‐Te‐QDs active material combination, the photodiode demonstrates consistent and dependable optical synaptic functions linked to learning. This is achieved through conduction modulation and time duration modulation of light stimulus. In addition, the opto‐synaptic functionalities such as short‐term and long‐term memory has also been successfully demonstrated not only on single device but also on 6 × 6 photodiodes array device. These findings underscore the significant potential of the hybrid structure of IGZO‐Te with QDs in optical artificial neuromorphic chips. This study presents an advanced IGZO‐Te photodiode with quantum dots (QDs) for enhanced optoelectronic performance. Engineered for high light sensitivity, it enhances AI and machine learning by simulating synaptic connections for image processing. The photodiode demonstrates reliable optical synaptic functions, including short‐term and long‐term memory, highlighting the potential of IGZO‐Te with QDs for optical neuromorphic chips.