Optimization of silicon ingot manufacturing for high production rates

This paper explores the optimization of critical parameters in the Czochralski (CZ) crystal growth process, a key technique in semiconductor device manufacturing. The CZ system involves the melting of high-purity polycrystalline silicon and controlled growth of a single-crystal ingot. This process relies on key variables such as the thermal shield thickness, shield gap size, cooling jacket length, crucible dimensions, and rotation speed. A computational model was applied to simulate heat transfer, fluid flow, and radiation heat exchange within the CZ system. The model was validated using experimental data, which demonstrated its precision in predicting crystal-front deflection and heater power. The results highlight the substantial impact of increasing the thermal shield thickness on the crystal-pulling speed and uniformity. Greater cooling jacket lengths increased the cooling rate, which increased the pulling speed, although more heater power was required. The shield gap size had negligible effects, and variations in the heater power ratio showed minimal impact. The optimal combination of parameters led to significantly improved crystal-pulling speed and reduced power consumption, making it a compelling choice for enhanced CZ crystal growth in semiconductor manufacturing.