Effect of Deposition Temperature on Optical Properties of Porous Amorphous SiC Film
To study the effect of different deposition temperatures on the optical properties of porous SiC films, single crystal Si was used as the substrate, a layer of anodic aluminum oxide (AAO) film was transferred on the Si substrate by chemical method, and then a layer of SiC was deposited on anodic alu...
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| Veröffentlicht in: | Journal of Wuhan University of Technology. Materials science edition 2024-08, Vol.39 (4), p.839-844 |
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| container_title | Journal of Wuhan University of Technology. Materials science edition |
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| creator | Xu, Jixiang Tao, Weijie Liu, Canhui Xu, Haoyao Li, Lixuan He, Zhenhua |
| description | To study the effect of different deposition temperatures on the optical properties of porous SiC films, single crystal Si was used as the substrate, a layer of anodic aluminum oxide (AAO) film was transferred on the Si substrate by chemical method, and then a layer of SiC was deposited on anodic aluminum oxide (AAO) template to prepare porous fluorescent SiC film by magnetron sputtering. The deposition temperature was ranged from 373 to 873 K. The thickness of the porous SiC film coated on the AAO surface was around 283 nm. It is found that the porous SiC with the deposition temperature of 873 K has the strongest photoluminescence (PL) intensity excited by 375 nm laser. The time-resolved PL spectra prove that the PL is mainly from intrinsic light emitting of SiC. With the optimized process, porous amorphous SiC film may have potential applications in the field of warm white LEDs. |
| doi_str_mv | 10.1007/s11595-024-2944-0 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_3076275618</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3076275618</sourcerecordid><originalsourceid>FETCH-LOGICAL-c268t-73b8826d1c6643b6ac3dd6fdee2cb6e977e6ae0c24cfb36a8b4a0db534d5c8d73</originalsourceid><addsrcrecordid>eNp1kF9LwzAUxYMoOKcfwLeCz9GbP03axzE3FQYbbD6HNE21Y11qkj747U2p4JNP99zLOefCD6F7Ao8EQD4FQvIyx0A5piXnGC7QjJQlw8CZvEwaADDlhF2jmxCOAByYEDO0XzWNNTFzTfZsexfa2LpzdrBdb72Og7dZWrd9bI0-ZTvv0jm2Noz-nfNuCNmic77_HNW-XWbr9tTdoqtGn4K9-51z9L5eHZaveLN9eVsuNthQUUQsWVUUVNTECMFZJbRhdS2a2lpqKmFLKa3QFgzlpqmY0EXFNdRVznidm6KWbI4ept7eu6_BhqiObvDn9FIxkILKXJAiucjkMt6F4G2jet922n8rAmpkpyZ2KrFTIzsFKUOnTEje84f1f83_h34AtYNyIQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3076275618</pqid></control><display><type>article</type><title>Effect of Deposition Temperature on Optical Properties of Porous Amorphous SiC Film</title><source>SpringerLink Journals</source><source>Alma/SFX Local Collection</source><creator>Xu, Jixiang ; Tao, Weijie ; Liu, Canhui ; Xu, Haoyao ; Li, Lixuan ; He, Zhenhua</creator><creatorcontrib>Xu, Jixiang ; Tao, Weijie ; Liu, Canhui ; Xu, Haoyao ; Li, Lixuan ; He, Zhenhua</creatorcontrib><description>To study the effect of different deposition temperatures on the optical properties of porous SiC films, single crystal Si was used as the substrate, a layer of anodic aluminum oxide (AAO) film was transferred on the Si substrate by chemical method, and then a layer of SiC was deposited on anodic aluminum oxide (AAO) template to prepare porous fluorescent SiC film by magnetron sputtering. The deposition temperature was ranged from 373 to 873 K. The thickness of the porous SiC film coated on the AAO surface was around 283 nm. It is found that the porous SiC with the deposition temperature of 873 K has the strongest photoluminescence (PL) intensity excited by 375 nm laser. The time-resolved PL spectra prove that the PL is mainly from intrinsic light emitting of SiC. With the optimized process, porous amorphous SiC film may have potential applications in the field of warm white LEDs.</description><identifier>ISSN: 1000-2413</identifier><identifier>EISSN: 1993-0437</identifier><identifier>DOI: 10.1007/s11595-024-2944-0</identifier><language>eng</language><publisher>Wuhan: Wuhan University of Technology</publisher><subject>Advanced Materials ; Aluminum oxide ; Chemistry and Materials Science ; Deposition ; Fluorescence ; Magnetron sputtering ; Materials Science ; Optical properties ; Photoluminescence ; Silicon carbide ; Silicon substrates ; Single crystals ; Spectral emittance</subject><ispartof>Journal of Wuhan University of Technology. Materials science edition, 2024-08, Vol.39 (4), p.839-844</ispartof><rights>Wuhan University of Technology and Springer-Verlag GmbH Germany, Part of Springer Nature 2024</rights><rights>Wuhan University of Technology and Springer-Verlag GmbH Germany, Part of Springer Nature 2024.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c268t-73b8826d1c6643b6ac3dd6fdee2cb6e977e6ae0c24cfb36a8b4a0db534d5c8d73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11595-024-2944-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11595-024-2944-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Xu, Jixiang</creatorcontrib><creatorcontrib>Tao, Weijie</creatorcontrib><creatorcontrib>Liu, Canhui</creatorcontrib><creatorcontrib>Xu, Haoyao</creatorcontrib><creatorcontrib>Li, Lixuan</creatorcontrib><creatorcontrib>He, Zhenhua</creatorcontrib><title>Effect of Deposition Temperature on Optical Properties of Porous Amorphous SiC Film</title><title>Journal of Wuhan University of Technology. Materials science edition</title><addtitle>J. Wuhan Univ. Technol.-Mat. Sci. Edit</addtitle><description>To study the effect of different deposition temperatures on the optical properties of porous SiC films, single crystal Si was used as the substrate, a layer of anodic aluminum oxide (AAO) film was transferred on the Si substrate by chemical method, and then a layer of SiC was deposited on anodic aluminum oxide (AAO) template to prepare porous fluorescent SiC film by magnetron sputtering. The deposition temperature was ranged from 373 to 873 K. The thickness of the porous SiC film coated on the AAO surface was around 283 nm. It is found that the porous SiC with the deposition temperature of 873 K has the strongest photoluminescence (PL) intensity excited by 375 nm laser. The time-resolved PL spectra prove that the PL is mainly from intrinsic light emitting of SiC. With the optimized process, porous amorphous SiC film may have potential applications in the field of warm white LEDs.</description><subject>Advanced Materials</subject><subject>Aluminum oxide</subject><subject>Chemistry and Materials Science</subject><subject>Deposition</subject><subject>Fluorescence</subject><subject>Magnetron sputtering</subject><subject>Materials Science</subject><subject>Optical properties</subject><subject>Photoluminescence</subject><subject>Silicon carbide</subject><subject>Silicon substrates</subject><subject>Single crystals</subject><subject>Spectral emittance</subject><issn>1000-2413</issn><issn>1993-0437</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp1kF9LwzAUxYMoOKcfwLeCz9GbP03axzE3FQYbbD6HNE21Y11qkj747U2p4JNP99zLOefCD6F7Ao8EQD4FQvIyx0A5piXnGC7QjJQlw8CZvEwaADDlhF2jmxCOAByYEDO0XzWNNTFzTfZsexfa2LpzdrBdb72Og7dZWrd9bI0-ZTvv0jm2Noz-nfNuCNmic77_HNW-XWbr9tTdoqtGn4K9-51z9L5eHZaveLN9eVsuNthQUUQsWVUUVNTECMFZJbRhdS2a2lpqKmFLKa3QFgzlpqmY0EXFNdRVznidm6KWbI4ept7eu6_BhqiObvDn9FIxkILKXJAiucjkMt6F4G2jet922n8rAmpkpyZ2KrFTIzsFKUOnTEje84f1f83_h34AtYNyIQ</recordid><startdate>20240801</startdate><enddate>20240801</enddate><creator>Xu, Jixiang</creator><creator>Tao, Weijie</creator><creator>Liu, Canhui</creator><creator>Xu, Haoyao</creator><creator>Li, Lixuan</creator><creator>He, Zhenhua</creator><general>Wuhan University of Technology</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20240801</creationdate><title>Effect of Deposition Temperature on Optical Properties of Porous Amorphous SiC Film</title><author>Xu, Jixiang ; Tao, Weijie ; Liu, Canhui ; Xu, Haoyao ; Li, Lixuan ; He, Zhenhua</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c268t-73b8826d1c6643b6ac3dd6fdee2cb6e977e6ae0c24cfb36a8b4a0db534d5c8d73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Advanced Materials</topic><topic>Aluminum oxide</topic><topic>Chemistry and Materials Science</topic><topic>Deposition</topic><topic>Fluorescence</topic><topic>Magnetron sputtering</topic><topic>Materials Science</topic><topic>Optical properties</topic><topic>Photoluminescence</topic><topic>Silicon carbide</topic><topic>Silicon substrates</topic><topic>Single crystals</topic><topic>Spectral emittance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xu, Jixiang</creatorcontrib><creatorcontrib>Tao, Weijie</creatorcontrib><creatorcontrib>Liu, Canhui</creatorcontrib><creatorcontrib>Xu, Haoyao</creatorcontrib><creatorcontrib>Li, Lixuan</creatorcontrib><creatorcontrib>He, Zhenhua</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of Wuhan University of Technology. Materials science edition</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xu, Jixiang</au><au>Tao, Weijie</au><au>Liu, Canhui</au><au>Xu, Haoyao</au><au>Li, Lixuan</au><au>He, Zhenhua</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Deposition Temperature on Optical Properties of Porous Amorphous SiC Film</atitle><jtitle>Journal of Wuhan University of Technology. Materials science edition</jtitle><stitle>J. Wuhan Univ. Technol.-Mat. Sci. Edit</stitle><date>2024-08-01</date><risdate>2024</risdate><volume>39</volume><issue>4</issue><spage>839</spage><epage>844</epage><pages>839-844</pages><issn>1000-2413</issn><eissn>1993-0437</eissn><abstract>To study the effect of different deposition temperatures on the optical properties of porous SiC films, single crystal Si was used as the substrate, a layer of anodic aluminum oxide (AAO) film was transferred on the Si substrate by chemical method, and then a layer of SiC was deposited on anodic aluminum oxide (AAO) template to prepare porous fluorescent SiC film by magnetron sputtering. The deposition temperature was ranged from 373 to 873 K. The thickness of the porous SiC film coated on the AAO surface was around 283 nm. It is found that the porous SiC with the deposition temperature of 873 K has the strongest photoluminescence (PL) intensity excited by 375 nm laser. The time-resolved PL spectra prove that the PL is mainly from intrinsic light emitting of SiC. With the optimized process, porous amorphous SiC film may have potential applications in the field of warm white LEDs.</abstract><cop>Wuhan</cop><pub>Wuhan University of Technology</pub><doi>10.1007/s11595-024-2944-0</doi><tpages>6</tpages></addata></record> |
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| source | SpringerLink Journals; Alma/SFX Local Collection |
| subjects | Advanced Materials Aluminum oxide Chemistry and Materials Science Deposition Fluorescence Magnetron sputtering Materials Science Optical properties Photoluminescence Silicon carbide Silicon substrates Single crystals Spectral emittance |
| title | Effect of Deposition Temperature on Optical Properties of Porous Amorphous SiC Film |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-15T06%3A49%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20Deposition%20Temperature%20on%20Optical%20Properties%20of%20Porous%20Amorphous%20SiC%20Film&rft.jtitle=Journal%20of%20Wuhan%20University%20of%20Technology.%20Materials%20science%20edition&rft.au=Xu,%20Jixiang&rft.date=2024-08-01&rft.volume=39&rft.issue=4&rft.spage=839&rft.epage=844&rft.pages=839-844&rft.issn=1000-2413&rft.eissn=1993-0437&rft_id=info:doi/10.1007/s11595-024-2944-0&rft_dat=%3Cproquest_cross%3E3076275618%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3076275618&rft_id=info:pmid/&rfr_iscdi=true |