Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with %0.5 Bi:ZnO interfacial layer

Capacitance and conductance measurements were made to evaluate the effects of voltage and frequency on the dielectric properties, ac electrical conductivity ( σ ac ), and electric-modulus of the Al/%0.5 Bi:ZnO/p-Si structures. The measurements were taken in a voltage range of (− 4 V)–(+ 4 V) and frequency range of 0.1–1 MHz, respectively. All parameters were discovered to have substantial relationships to voltage and frequency at accumulation and depletion regions due to relaxation mechanisms and interface traps positioned between %0.5 Bi:ZnO interlayer and p-Si with energies in the Si bandgap. The e ′- V , M ″- V , and Z ′- V plots all demonstrate a peak, and because of electronic charges being reordering and restructuring at surfaces, traps, and dipole-polarization under the external electric field, the peak’s position and magnitude vary with frequency. The double logarithmic σ ac - w curve shows linear behaviour, its slope was found as 0.699, and this value of the Al/%0.5 Bi:ZnO/p-Si/Au structure has high ac conductivity or low resistivity. The observed high changes in the dielectric constant and dielectric loss ( e ′, e ′′) were explained by Maxwell–Wagner type polarization as well as interface traps.