25‐1: Invited Paper: Effect of Self‐Alignment on BGTC IGZO AMeTFTs
This work evaluates the effect of self‐alignment on the performance of bottom‐gate IGZO TFTs for AMOLED backplanes via SPICE simulation. Transient simulations are used to evaluate the row and column scaling of self‐aligned and non‐self‐aligned IGZO TFT to make quantitative comparisons in terms of li...
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Veröffentlicht in: | SID International Symposium Digest of technical papers 2024-04, Vol.55 (S1), p.217-226 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | This work evaluates the effect of self‐alignment on the performance of bottom‐gate IGZO TFTs for AMOLED backplanes via SPICE simulation. Transient simulations are used to evaluate the row and column scaling of self‐aligned and non‐self‐aligned IGZO TFT to make quantitative comparisons in terms of line, settle and discharge time. Essentially, this work addresses the following questions: (1) given that self‐aligned TFTs have lower mobility than non‐self‐aligned TFTs due to large differences in contact resistance, does the lower overlap capacitance of self‐aligned TFTs always lead to better transient performance than non‐self‐aligned TFTs? and (2) Under what condition(s) do non‐self‐aligned TFTs become comparable to self‐aligned TFTs in terms of transient performance? |
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ISSN: | 0097-966X 2168-0159 |
DOI: | 10.1002/sdtp.17041 |