Synthesis and characterization of BaGdTiFeO6: unveiling the microstructural, dielectric, and optical properties of a novel double perovskite

The novel double perovskite oxide material, BaGdTiFeO 6 (BGTFO), was synthesized using the solid-state reaction method. The material structure symmetry, morphology, and optical properties were investigated using a variety of techniques. XRD measurements showed that this material crystallizes in a cu...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2024-06, Vol.35 (17), p.1187, Article 1187
Hauptverfasser: Boudad, L., El Boukili, A., Taibi, M., Belayachi, A., Abd-lefdil, M.
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Sprache:eng
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Zusammenfassung:The novel double perovskite oxide material, BaGdTiFeO 6 (BGTFO), was synthesized using the solid-state reaction method. The material structure symmetry, morphology, and optical properties were investigated using a variety of techniques. XRD measurements showed that this material crystallizes in a cubic double perovskite structure with a P m 3 ¯ m space group. The unit cell parameters, atomic positions, crystallite size, and site occupancies were determined using the Rietveld refinement method. Vibrational modes and bond deformations in the sample were examined through FTIR spectroscopy. Scanning electron microscopy revealed irregularly shaped grains with a non-uniform size distribution. The energy-dispersive X-ray spectroscopy (EDX) analysis confirmed the homogeneity, stoichiometry, and chemical formula of this double perovskite oxide. UV–Visible spectroscopy was employed to analyze the material’s absorbance, determining an energy bandgap of 2.05 eV. Additionally, the refractive index of the material was determined using both the Moss as well as the Herve and Vandamme methods, highlighting its potential for use in various application fields, including the optoelectronic industry. The interplay between frequency and temperature in influencing both the dielectric and conductivity characteristics of materials has also been investigated.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-024-12983-w