Recent advances of 2D conductive metal-organic frameworks in thermoelectrics

Conductive metal-organic frameworks (c-MOFs) are promising thermoelectric (TE) materials owing to their low thermal conductivity and tunable electronic properties. Theoretical results have shown that two-dimensional semiconductors have natural advantages in the TE field. Big progress has been achiev...

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Veröffentlicht in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2024, Vol.12 (24), p.14245-14267
Hauptverfasser: Li, Kuncai, Wang, Jing, Wang, Hong
Format: Artikel
Sprache:eng
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Zusammenfassung:Conductive metal-organic frameworks (c-MOFs) are promising thermoelectric (TE) materials owing to their low thermal conductivity and tunable electronic properties. Theoretical results have shown that two-dimensional semiconductors have natural advantages in the TE field. Big progress has been achieved in the past decades both theoretically and experimentally. Two-dimensional metal-organic frameworks (2D c-MOFs) have shown desirable features for TE applications such as high electrical conductivity and low thermal conductivity. Enhanced ZT values have also been observed in c-MOF composites. These promising results might open new avenues for developing 2D c-MOF-based high-performance TE materials. This review summarizes state-of-the-art works on strategies of 2D c-MOF-based TE materials. Key TE parameters are discussed, and intrinsic TE properties of 2D c-MOFs are analyzed. Strategies to improve the electrical conductivity of 2D c-MOFs are explored, followed by an overview of relevant chemical structure-electrical property relations. At last, few representative samples of 2D c-MOF-based materials with high TE performance are highlighted. 2D c-MOFs have shown desirable features for TE applications such as high electrical conductivity and low thermal conductivity. This review summarizes the state-of-the-art works on the strategies of 2D c-MOFs-based TE materials.
ISSN:2050-7488
2050-7496
DOI:10.1039/d4ta01820f