The thermoelectric properties of Cu2S are enhanced by doping tin with hydrothermal method
Doping can greatly reduce the lattice thermal conductivity of thermoelectric materials, which is considered as one of the effective ways to improve the thermoelectric properties of thermoelectric materials. First of all, we use the simple and environmentally friendly solution thermal method combined...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2024-06, Vol.35 (17), p.1110, Article 1110 |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Doping can greatly reduce the lattice thermal conductivity of thermoelectric materials, which is considered as one of the effective ways to improve the thermoelectric properties of thermoelectric materials. First of all, we use the simple and environmentally friendly solution thermal method combined with the tube furnace sintering technology to explore the optimal temperature of sintering Cu
2
S in the tube furnace. When the sintering temperature reaches 700 °C, we get the thermoelectric value of 0.21. Subsequently, Cu
2
S thermoelectric materials doped with xmol%Sn (
x
= 0.5, 1, 3, 5) were prepared and the optimal concentration of Sn was explored. The Sn atom replaces the Cu atom with a smaller radius, greatly reducing the thermal conductivity of the matrix material. In the sample doped with 1%Sn, the total thermal conductivity reaches 0.31 WK
−1
m
−1
, which is 22.5% lower than that of the pure phase sample. In addition, above 623 K, the conductivity of samples doped with 1%Sn is better than that of intrinsic samples, indicating that Sn doping can optimize the conductivity of Cu
2
S to a certain extent. At 773 K, the ZT of Cu
2
S + 1 mol%Sn can reach 0.51. 132% higher than undoped Cu
2
S.This provides a new idea for the preparation and commercial application of Cu–S based thermoelectric materials. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-024-12884-y |