Deposition of a‐C:H:SiOx Coatings Using Low‐Frequency Inductively Coupled Plasma

This article investigates the plasma‐enhanced chemical vapor deposition of a‐C:H:SiOx coatings in a non‐self‐sustaining arc discharge plasma with a hot cathode in combination with a low‐frequency (200 kHz) inductively coupled plasma. It is shown that increasing the inductor power from 0 to 600 W leads to a twofold increase in the ion current density on the substrate. An increase in ion bombardment intensity results in a 1.3‐fold reduction in the coating's growth rate due to the resputtering phenomenon, a 1.5‐fold reduction in surface roughness, and an improvement in the mechanical properties of the coatings. The hardness of the coating is increased by 9–11%, the plasticity index by 10–17%, and the resistance to plastic deformation by 32–49%. a‐C:H:SiOx coatings are synthesized by the plasma‐enhanced chemical vapor deposition in a non‐self‐sustaining arc discharge plasma with a hot cathode in combination with a low‐frequency (200 kHz) inductively coupled plasma. Surface roughness is reduced and mechanical properties are improved by increasing the ion bombardment intensity of the coating.