Characterization of different darken sand particles and behavior under fluidized and irradiated conditions
The use of solid particles in a fluidized bed with concentrated solar irradiation from the top is a promising technology for the next generation of concentrated solar power (CSP) plants. Sand is an inexpensive and abundant material easy to fluidize, but it has a low absorptivity, which is around 0.5...
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Veröffentlicht in: | Journal of physics. Conference series 2024-05, Vol.2766 (1), p.12116 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The use of solid particles in a fluidized bed with concentrated solar irradiation from the top is a promising technology for the next generation of concentrated solar power (CSP) plants. Sand is an inexpensive and abundant material easy to fluidize, but it has a low absorptivity, which is around 0.5 according to different previous works. This optical property is a key parameter for CSP applications with solid particles. This work presents a novel methodology to induce darkening of the sand surface by inducing solid state diffusion of Mn in SiO
2
, rendering a stable material resistant to abrasion upon the fluidization process. For this study, two different samples considering different MnCO
3
:SiO
2
weight ratios (1:30 and 1:50) were analyzed. The objective is to compare the two samples and optimize the concentration of MnCO
3
to get the desired darkening of the sand and high absorptivity. First, the main properties of the particles were analyzed (particle size, morphology, color and absorptivity). Second, the samples were tested in a lab-scale fluidized bed directly irradiated from the top with a beam-down 4kW Xe lamp. Both samples were tested under three different fluidized velocities: 1.5, 2.0, and 2.5 times the minimum fluidization velocity (Umf). In both cases, there is a significant increase in the maximum temperature reached during the process, with temperatures exceeding 260 °C. This is clearly higher than the case of raw sand, which reaches 230 °C under the same conditions. Furthermore, these values exceed the highest temperature reached by SiC in the same facility, which is 250 °C, and it is considered as one of best tested materials for CSP applications. |
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ISSN: | 1742-6588 1742-6596 |
DOI: | 10.1088/1742-6596/2766/1/012116 |