Fully CMOS‐Based p‐Bits with a Bistable Resistor for Probabilistic Computing
Probabilistic computing can solve complex combinatorial optimization problems more efficiently than conventional deterministic computing. A probabilistic bit (p‐bit) with an n‐p‐n bistable resistor (biristor) is demonstrated for probabilistic computing. It is fabricated on an 8‐inch wafer with compl...
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Veröffentlicht in: | Advanced functional materials 2024-05, Vol.34 (22), p.n/a |
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Sprache: | eng |
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Zusammenfassung: | Probabilistic computing can solve complex combinatorial optimization problems more efficiently than conventional deterministic computing. A probabilistic bit (p‐bit) with an n‐p‐n bistable resistor (biristor) is demonstrated for probabilistic computing. It is fabricated on an 8‐inch wafer with complementary metal–oxide–semiconductor (CMOS) compatible technologies. Its stochastic behavior of threshold switching, which is based on the phenomenon of a single transistor latch, provides output with a Boltzmann distribution. The p‐bit is composed of a biristor, a serial resistor, and a comparator. The output probability of the biristor‐based p‐bits shows a sigmoidal relationship with the input voltage, showing typical p‐bit characteristics. Invertible Boolean logic operations with p‐bits are demonstrated, and weighted maximum Boolean satisfiability problems are solved with high energy efficiency and accuracy. The biristor‐based p‐bits with perfect CMOS compatibility show sufficient device stability, demonstrating the possibility of large‐scale integration with a p‐bit array for complex optimization solvers.
A probabilistic bit (p‐bit) with an n‐p‐n bistable resistor is demonstrated for probabilistic computing. It is fabricated on an 8‐inch wafer with complementary metal–oxide–semiconductor compatible technologies. Based on the stochastic behavior of a single transistor latch, invertible Boolean logic operations are demonstrated, and weighted maximum Boolean satisfiability problems are solved with high energy efficiency and accuracy. |
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ISSN: | 1616-301X 1616-3028 |
DOI: | 10.1002/adfm.202307935 |