Embedded Gate Driver Circuit With Self-Aligned InGaZnO TFTs Using Common Bootstrapped Capacitive Driving for High-Resolution WOLED Displays

We propose an advanced gate driver circuit with self-aligned InGaZnO (IGZO) thin-film transistors (TFTs) using common bootstrapped capacitive driving for multiple gate outputs. The proposed circuit represents a compact circuit area design and consistent falling time ( {T}_{f}\text {)} applicable to...

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Veröffentlicht in:IEEE transactions on electron devices 2024-06, Vol.71 (6), p.3788-3793
Hauptverfasser: Kim, Kyung Min, Noh, Seok, Jung, Sujin, Han, Inhyo, Yang, Joon-Young, Min Ha, Yong, Young Yoon, Soo, Kim, Hyun Jae
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Sprache:eng
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Zusammenfassung:We propose an advanced gate driver circuit with self-aligned InGaZnO (IGZO) thin-film transistors (TFTs) using common bootstrapped capacitive driving for multiple gate outputs. The proposed circuit represents a compact circuit area design and consistent falling time ( {T}_{f}\text {)} applicable to high-resolution white organic light-emitting diode (WOLED) displays. The four outputs of the unit stage exhibited uniform {T}_{f} in simulation and characterization ( \Delta {T}_{f} \lt 0.02~\mu s). This could be attributed to the calibrated discharging ability of pull-up transistors (T6s) having the same gate nodes, mainly resulted from the maintained gate-to-source voltage in T6s. We demonstrate a 13.3-inch-diagonal-size (166 pixels per inch) WOLED display using the proposed circuit, with uniform luminance and excellent circuit reliability.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2024.3396777