Ruggedness of Silicon Power MOSFETs-Part II: Device Design Failures and Modeling: A Review

Power MOSFETs are crucial devices in a multitude of everyday applications that require an extended lifetime. Inadequate design of these devices may cause premature failures. In this work, the impact of the device design of power MOSFETs has extensively been reviewed. Furthermore, as, in this context...

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Veröffentlicht in:IEEE transactions on electron devices 2024-06, Vol.71 (6), p.3458-3469
Hauptverfasser: Tambone, R., Ferrara, A., Siemieniec, R., Wood, A., Magrini, F., Hueting, R. J. E.
Format: Artikel
Sprache:eng
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Zusammenfassung:Power MOSFETs are crucial devices in a multitude of everyday applications that require an extended lifetime. Inadequate design of these devices may cause premature failures. In this work, the impact of the device design of power MOSFETs has extensively been reviewed. Furthermore, as, in this context, modeling and simulation are crucial, several proposed models used to analyze the device ruggedness are discussed. Finally, similar to Part I of this article, work guidelines to prevent failure are provided.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2024.3394463